Method and apparatus of pattern inspection and semiconductor inspection system using the same

1. A pattern data forming apparatus comprising:

a pattern extractor for extracting pattern data about a semiconductor device from image data obtained by photographing the semiconductor device; and

a pattern layer generator for separating a plurality of patterns included in the extracted pattern data on the basis of design data including layer data of the semiconductor device indicating a relationship of upper and lower layers.

2. The pattern data forming apparatus according to claim 1 , comprising a position detector for detecting collation positions of the design data and the pattern data for each layer by using the pattern data separated according to each layer.

3. The pattern data forming apparatus according to claim 2 , comprising a position detector, when a pattern range included in said design data is different from a pattern range included in said pattern data, for detecting a position of the pattern data relative to the design data region or a collation position of the pattern data relative to the pattern data region.

4. The pattern data forming apparatus according to claim 2 , comprising a layer offset detector for detecting a position offset between layers on the basis of said collation position for each layer.

5. The pattern data forming apparatus according to claim 2 , comprising:

a detector for detecting a collation position with use of the design data of a target layer to be inspected and the pattern data corresponding to said target layer generated by said pattern layer generator; and

a unit for evaluating a pattern shape from the collation position and a pattern inspection position.

6. The pattern data forming apparatus according to claim 1 , wherein said pattern layer generator adds information about a layer to which the pattern data belongs to the pattern data classified according to each layer.

7. The pattern data forming apparatus according to claim 1 , wherein information of a layer to which the pattern data belongs and information on the design data having a correspondence relationship therewith are added to the classified pattern data according to each layer.

8. A semiconductor data forming system comprising:

a pattern extractor for extracting pattern data of the semiconductor device from image data generated by irradiating a semiconductor device with an electron beam and by detecting a secondary electron issued from the semiconductor device; and

a pattern layer generator for separating a plurality of patterns included in the extracted pattern data on the basis of design data including layer data of the semiconductor device indicating a relationship of upper and lower layers.

9. The semiconductor data forming system according to claim 8 , wherein pattern inspection of the semiconductor device is carried out by receiving said image data via a network or via a memory.

10. A pattern data forming apparatus comprising:

a pattern extractor for extracting pattern data of a semiconductor device from image data obtained by photographing a semiconductor device; and

a position detector for separating a plurality of patterns included in the extracted pattern data on the basis of design data including layer data of the semiconductor device indicating a relationship of upper and lower layers.

11. A pattern data forming apparatus comprising:

a pattern extractor for extracting pattern data of a semiconductor device from image data obtained by photographing the semiconductor device; a pattern layer generator for separating a plurality of patterns included in the extracted pattern data into data for a plurality of layers; and

a pattern layer offset detector for detecting an offset between a plurality of the layers on the basis of a plurality of pieces of design data for each layer corresponding to patterns included in said image data and said extracted pattern data.

12. The pattern data forming apparatus according to claim 11 , wherein

an offset between design data of first and second layers and first and second pattern data is found and a difference between position information of the first and second layers is detected on the basis of the design data of the first and second layers corresponding to a pattern included in said image data and the first and second pattern data corresponding to the design data of the first and second layers using said extracted pattern data.

13. A semiconductor pattern display device comprising:

a pattern extractor for extracting pattern data of a semiconductor device from image data obtained by photographing the semiconductor device; and

a pattern data display unit for separating a plurality of patterns included in the extracted pattern data by using layer data for display.

14. A semiconductor pattern display device according to claim 13 , wherein said pattern data display unit displays the pattern data classified according to each layer on the basis of design data of a plurality of layers corresponding to patterns included in said photographed image data and said extracted pattern data.

15. A semiconductor pattern display device according to claim 14 , wherein said pattern data display unit displays the design data of the plurality of layers and said extracted pattern data to be overlapped with each other.

16. A pattern identification method comprising the steps of:

extracting pattern data of a semiconductor device from image data obtained by photographing the semiconductor device; and

separating a plurality of patterns included in the extracted pattern data on the basis of design data including layer data which indicates attribute information to the layers.

17. The pattern identification method according to claim 16 , wherein collation positions of the design data and the pattern data for each layer are detected by using the design data for each layer and the pattern data separated according to each layer.

18. A semiconductor data forming method comprising the steps of:

generating image data by irradiating a semiconductor device with an electron beam and detecting secondary electrons emitted from the semiconductor device; and

separating a plurality of patterns included in the generated images, for different layers, on the basis of design data including layer data which indicates attribute information to the layers.

19. The semiconductor data forming method according to claim 18 , wherein pattern inspection of the semiconductor device is carried out by receiving said image data via a network or via a memory.

20. A pattern data forming apparatus comprising:

a signal input interface for receiving information regarding image data from a scanning electron microscope; and

a data calculator for separating a plurality of patterns included in the received scanning electron microscope image data, based on layer data of design data indicating relationship of upper and lower layers.

21. The pattern data forming apparatus according to claim 20 , wherein the data calculator separates the patterns on the received scanning electron microscope image data based on the layer data.

22. The pattern data forming apparatus according to claim 20 , wherein the layer data includes attribution information to the layers of the semiconductor device.

23. A pattern data forming apparatus comprising:

a signal input interface for receiving information regarding image data from a scanning electron microscope; and

a data calculator for separating a plurality of patterns included in the received scanning electron microscope image with design data having layer data, and identifying the plural patterns with the layer data.