Integrated circuit system employing gate shield and/or ground shield
View Patent ↗A method for manufacturing an integrated circuit system that includes: forming a substrate with an active region; depositing a material over the substrate to act as an etch stop and define a source and a drain; depositing a first dielectric over the substrate; processing the first dielectric to form features within the first dielectric including a shield; and depositing fill within the features to electrically connect the shield to the source of the active region by a single process step.
1. A method for manufacturing an integrated circuit system comprising:
forming a substrate with an active region;
depositing a material over the substrate to act as an etch stop and define a source and a drain;
depositing a first dielectric over the substrate;
processing the first dielectric to form features within the first dielectric including a shield; and
depositing fill within the features to electrically connect the shield to the source of the active region by a single process step.
2. The method as claimed in claim 1 further comprising:
depositing a barrier layer before depositing fill within the features.
3. The method as claimed in claim 1 further comprising:
removing excess fill while maintaining the electrical connection between the shield and the source.
4. The method as claimed in claim 1 further comprising:
forming an inductor above the shield.
5. The method as claimed in claim 1 further comprising:
configuring the shield to alter Miller capacitance, hot carrier injection occurrences, or capacitive substrate current affects on Q factor.