Transistor gate shape metrology using multiple data sources
View Patent ↗The claimed subject matter can provide a mechanism for ascertaining a variety of metrological data relating to one or more features (e.g., a transistor gate) of a chip/wafer. In addition, results of electrical testing on the chip/wafer can also be gathered and, together with the metrological data, input to a data store. From the information in the data store, a three-dimensional model for the feature(s) of the chip/wafer can be constructed and subjected to analysis, testing, and/or simulation. As well, the three-dimensional model can be optimized and an optimized three-dimensional model can be employed to affect process control in a feedback/forward manner, e.g., to apply optimizations to the next or the current wafer, respectively. Accordingly, the disclosed mechanisms may be used to optimize semiconductor performance, yield, or for research and development. In addition the three-dimensional model may be used in analysis, simulation, or debugging software.
1. A computer implemented system that accurately models a feature of a semiconductor wafer in three dimensions, comprising:
a data store that receives metrology data associated with a feature of a semiconductor wafer;
a modeling component that creates a three-dimensional model of the feature based at least in part on the metrology data;
an analysis component that employs the three-dimensional model to predict a performance parameter for the feature and infer at least one wafer design modification that improves performance of the feature; and
a control component that outputs feedback or feed forward information to modify the fabrication process of the next or the current wafer to implement the inferred design modification.
2. The system of claim 1 , the data store receives the metrology data in real-time as the feature is manufactured.
3. The system of claim 1 , the data store receives the metrology data from at least one of a polysilicon thickness measurement sensor, a polysilicon FICD measurement sensor, a source/drain implant mask, an optical camera, a scanning electron microscope, an optical reflectometry sensor, an atomic force microscope, and a device that resolves electrical measurements.
4. The system of claim 1 , the performance parameter is at least one of a speed value, a height value, a dimension value, a shape value, a probability density function of a shape, a critical path metric, a clock value through a critical path, a semiconductor yield value, or a difference value to determine if a photomask was correctly aligned.
5. The system of claim 1 , the analysis component analyzes the three-dimensional model and infers a modification to the model that brings performance of the feature within a desired threshold.
6. The system of claim 5 , the modified model achieves a desired metric for the performance parameter.
7. The system of claim 5 , the modification to the model is based at least in part upon user input.
8. The system of claim 6 , the analysis component infers a modification to the feature that results in an optimized feature associated with the model.
9. The system of claim 8 , the analysis component determines a modification to a manufacturing parameter that results in the optimized feature.
10. The system of claim 8 , further comprising a control component that transmits control information that relates to the modification to the feature.
11. The system of claim 10 , the control information instructs a manufacturing device to manufacture the optimized feature.
12. The system of claim 10 , the control information is transmitted by way of a feedback loop and a feed-forward loop.
13. A method for determining a three-dimensional shape of a feature on a semiconductor wafer, comprising:
measuring a feature of a semiconductor wafer;
storing metrology data relating to the measuring in a data store;
constructing a three-dimensional model of the feature based at least in part upon the metrology data;
predicting a performance parameter for the feature based at least in part upon the three dimensional model;
inferring at least one wafer design modification that improves performance of the feature; and
outputting feedback or feed forward information to modify the fabrication process of the next or the current wafer to implement the inferred design modification.
14. The method of claim 13 , further comprising simulating a performance parameter of the feature based at least in part upon the three-dimensional model.
15. The method of claim 14 , the simulating the performance parameter occurs during fabrication of the semiconductor wafer and prior to a time when the performance parameter can be measured.
16. The method of claim 14 , further comprising optimizing the performance parameter by adjusting the three-dimensional model and simulating the feature using the adjusted three-dimensional model.
17. The method of claim 16 , further comprising:
determining a new feature design in connection with the adjusted three-dimensional model; and
providing control information to the fabrication process that implements the new feature design on the semiconductor wafer.
18. A system that constructs a three-dimensional model of semiconductor wafer features, comprising:
means for collecting metrology data from a feature on a semiconductor wafer;
means for constructing a three-dimensional model based at least in part on the metrology data;
means for predicting a performance parameter for the feature based at least in part upon the three dimensional model;
means for inferring at least one wafer design modification that improves performance of the feature; and
means for outputting feedback or feed forward information to modify the fabrication process of the next or the current wafer to implement the inferred design modification.
19. The system of claim 18 , further comprising:
means for predicting a performance of the feature; and
means for updating a manufacturing process that manufactures the feature.