Method for fabricating semiconductor device
View Patent ↗A method for fabricating a semiconductor device includes etching a predetermined portion of a substrate to form a first recess having a bottom middle portion roundly projected and bottom edge portions tapered to have a micro-trench profile; and etching the substrate beneath the first recess to form a second recess, the second recess being rounded and being wider than the first recess.
1. A method for fabricating a semiconductor device, comprising:
etching a predetermined portion of a substrate to form a first recess having a bottom middle portion roundly projected and bottom edge portions tapered to have a micro-trench profile, the bottom edge portions being deeper than the bottom middle portion; and
etching the substrate beneath the first recess to form a second recess, the second recess being rounded and being wider than the first recess,
wherein forming the first recess includes performing a plasma etching with a mixture gas including a chlorine-based gas and an inert gas.
2. The method of claim 1 , wherein a percentage of the inert gas in the mixture gas ranges from 4% to 10%.
3. The method of claim 1 , wherein the chlorine-based gas includes boron trichloride (BCl 3 ).
4. The method of claim 1 , wherein the inert gas includes argon (Ar).
5. The method of claim 1 , wherein forming the first recess includes performing a plasma etching with a power ranging from 500 W to 2,000 W.
6. The method of claim 1 , wherein forming the first recess includes performing a plasma etching with a pressure ranging from 4 mTorr to 8 mTorr.
7. The method of claim 1 , wherein forming the second recess includes performing a plasma etching with a mixture gas including chlorine (Cl 2 ) gas and hydrogen bromide (HBr) gas.
8. The method of claim 1 , wherein the first recess and the second recess constitute a bulb-shaped recess.
9. The method of claim 1 , wherein forming the first recess includes etching the substrate using a mask pattern including an oxide-based layer and a polysilicon-based hard mask as an etch mask.
10. A method for fabricating a semiconductor device, comprising:
etching a predetermined portion of a substrate to form a first recess having a roundly projected bottom middle portion and bottom edge portions tapered to have a micro-trench profile, the bottom edge portions being deeper than the bottom middle portion;
etching the substrate beneath the first recess to form a second recess, the second recess being rounded and being wider than the first recess;
rounding top corners of the first recess;
forming a gate insulation layer over the substrate with the first recess and the second recess formed therein; and
forming a gate pattern having a first portion filled into the first and second recesses and a second portion projected above the substrate over the gate insulation layer;
wherein forming the first recess includes performing a plasma etching with a mixture gas including a chlorine-based gas and an inert gas.
11. The method of claim 10 , wherein a percentage of the inert gas in the mixture gas range from 4% to 10%.
12. The method of claim 10 , wherein the chlorine-based gas includes BCl 3 .
13. The method of claim 10 , wherein the inert gas includes Ar.
14. The method of claim 10 , wherein forming the first recess includes performing a plasma etching with a power ranging from 500 W to 2,000 W, and a pressure ranging from 4 mTorr to 8 mTorr.
15. The method of claim 10 , wherein forming the second recess includes performing a plasma etching with a mixture gas including Cl 2 and HBr.
16. The method of claim 10 , wherein forming the first recess includes etching the substrate using a mask pattern comprised of an oxide layer and a polysilicon hard mask as an etch mask.
17. The method of claim 10 , wherein rounding the top corners of the first recess includes performing a plasma etching with a mixture gas including tetrafluoromethane (CF 4 ) and oxygen (O 2 ).