IP Library Granted Patent US 7,747,817
Granted Patent B2
US 7,747,817 · App. 11/478,163 · Granted Jun 29, 2010

Performing data operations using non-volatile third dimension memory

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Quick Facts
Patent No.
US 7,747,817
App. No.
11/478,163
Granted
Jun 29, 2010
Kind
B2
Abstract

Performing data operations using non-volatile third dimension memory is described, including a storage system having a non-volatile third dimension memory array configured to store data, the data including an address indicating a file location on a disk drive, and a controller configured to process an access request associated with the disk drive, the access request being routed to the non-volatile third dimension memory array to perform a data operation, wherein data from the data operation is used to create a map of the disk drive. In some examples, an address in the non-volatile third dimension memory array provides an alias for another address in a disk drive.

Claims (30)

1. A storage system, comprising:

a non-volatile third dimension memory array configured to store data, the data including an address indicating a file location on a disk drive, the third dimension memory array positioned above and in contact with a substrate, the substrate including circuitry fabricated thereon and configured to perform a data operation on the third dimension memory array, the third dimension memory array including a plurality of third dimension memory cells that are arranged in a cross-point array fabricated above the substrate and electrically coupled with the circuitry, each memory cell including a two-terminal memory element configured to store non-volatile data as a plurality of conductivity values and having one terminal electrically coupled with a first conductive array line of the cross-point array and another terminal electrically coupled with a second conductive array line of the cross-point array, the plurality of conductivity values are reversibly switchable by applying a write voltage across the one terminal and the another terminal, and each two-terminal memory element including an electrolytic tunnel barrier having a thickness of less than 50 Å and a mixed valence conductive oxide including mobile oxygen ions, the write voltage operative to reversibly move a portion of the mobile oxygen ions between the mixed valence conductive oxide and the electrolytic tunnel barrier; and

a controller configured to process an access request associated with the disk drive, the access request being routed to the circuitry to perform the data operation, wherein data from the data operation is used to create a map of the disk drive.

2. The storage system of claim 1 , wherein the access request is a special access request.

3. The storage system of claim 1 , wherein the non-volatile third dimension memory array is included in the map, the non-volatile third dimension memory array being referenced in the map using an alias.

4. The storage system of claim 1 , wherein the data further includes a pointer for reading data from the disk drive.

5. The storage system of claim 1 , wherein the non-volatile third dimension memory array is configured to replace a directory associated with the disk drive.

6. The storage system of claim 1 , wherein the non-volatile third dimension memory array is configured to replace a file allocation table associated with the disk drive.

7. The storage system of claim 1 , wherein the controller intercepts the access request before the access request initiates retrieving the data from a disk drive cylinder.

8. The storage system of claim 1 , wherein the non-volatile third dimension memory array is configured to perform a memory management operation.

9. The storage system of claim 8 , wherein the memory management operation maps a parameter to a data location in the non-volatile third dimension memory array.

10. The storage system of claim 9 , wherein the parameter indicates a value selected from the group consisting of a cylinder value, a head value, and a sector value.

11. The storage system of claim 9 , wherein the parameter indicates a head value.

12. The storage system of claim 9 , wherein the parameter indicates a sector value.

13. The storage system of claim 1 , wherein the non-volatile third dimension memory array is configured to replace a module selected from the group consisting of a DRAM module, and a Flash module.

14. The storage system of claim 1 , wherein the non-volatile third dimension memory array is configured to store a directory and a file allocation table associated with the disk drive.

15. The storage system of claim 1 , wherein the non-volatile third dimension memory array is configured to replace a Flash module and a SRAM module, the non-volatile third dimension memory being configured to store a directory and a file allocation table associated with the disk drive.

16. The storage system of claim 1 , wherein the controller is configured to retrieve data from a directory and a file allocation table from the non-volatile third dimension memory array and an interface.

17. The storage system of claim 1 , wherein the non-volatile third dimension memory array is integrated with the controller in an application-specific integrated circuit and the controller is fabricated on the substrate.

18. The storage system of claim 1 , wherein the non-volatile third dimension memory array is externally configured relative to the controller.

19. The storage system of claim 1 , wherein the non-volatile third dimension memory array and the controller are integrated in a circuit.

20. The storage system of claim 1 , wherein the non-volatile third dimension memory array comprises a plurality of memory planes, each of the plurality of memory planes being vertically disposed in relation to another memory plane, and the plurality of memory planes are fabricated above the substrate.

21. The storage system of claim 1 , wherein a directory is mapped to the non-volatile third dimension memory array.

22. The storage system of claim 1 , wherein a file allocation table is mapped to the non-volatile third dimension memory array.

23. The storage system of claim 1 , wherein the non-volatile third dimension memory array includes a DRAM interface configured to perform a data operation, the DRAM interface being coupled to the controller and configured to store an alias.

24. The storage system of claim 23 , wherein the alias identifies a value selected from the group consisting of a cylinder value, a head value, and a sector value.

25. The storage system of claim 23 , wherein the alias identifies a head value.

26. The storage system of claim 23 , wherein the alias identifies a sector value.

27. The storage system of claim 1 , wherein the controller is configured to perform memory management.

28. The storage system of claim 1 , wherein the non-volatile third dimension memory array is configured to replace a Flash module.

Assignments (3)
RELEASE Recorded Apr 9, 2012
From: SILICON VALLEY BANK; GOLD HILL CAPITAL
To: UNITY SEMICONDUCTOR, INC.
Reel/Frame 028132/0675 →
SECURITY AGREEMENT Recorded Apr 13, 2009
From: UNITY SEMICONDUCTOR CORPORATION
To: GOLD HILL CAPITAL
Reel/Frame 023129/0669 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 19, 2006
From: NORMAN, ROBERT
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 017961/0693 →