IP Library Granted Patent US 8,008,778
Granted Patent B2
US 8,008,778 · App. 11/479,379 · Granted Aug 30, 2011

Semiconductor device

Assignee: Spansion, LLC
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Quick Facts
Patent No.
US 8,008,778
App. No.
11/479,379
Granted
Aug 30, 2011
Kind
B2
Abstract

A semiconductor device includes a first metal layer provided above a semiconductor substrate, an interlayer insulating film provided above the first metal layer, a second metal layer that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, the second metal layer being connected to the first metal layer, and a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer.

Claims (49)

1. A semiconductor device comprising:

a first metal layer provided above a semiconductor substrate;

an interlayer insulating film provided above the first metal layer;

a second metal layer, having side surfaces, that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, wherein the underlying layer contacts the side surfaces of the second metal layer and the second metal layer is connected to the first metal layer; and

a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer wherein the first barrier layer and the underlying layer form a single inclined surface that contacts an inclined side surface of the second metal layer.

2. The semiconductor device as claimed in claim 1 , wherein the underlying layer is the first metal layer.

3. The semiconductor device as claimed in claim 1 , wherein the underlying layer is a second barrier layer.

4. The semiconductor device as claimed in claim 3 , wherein the second metal layer has a different main composition from that of the first metal layer.

5. The semiconductor device as claimed in claim 1 , wherein the first barrier layer has a width that decreases upwards.

6. The semiconductor device as claimed in claim 1 , wherein the second metal layer comprises at least one of an interconnection layer and a plug metal.

7. A computing device comprising:

a processor;

an input component;

an output component;

a memory comprising:

a volatile memory; and

a non-volatile memory comprising:

a first metal layer provided above a semiconductor substrate;

an interlayer insulating film provided above the first metal layer;

a second metal layer, having side surfaces, that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, wherein the underlying layer contacts the side surfaces of the second metal layer and the second metal layer is connected to the first metal layer;

a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer wherein the first barrier layer and the underlying layer form a single inclined surface that contacts an inclined side surface of the second metal layer.

8. A wireless communications device, said wireless communications device comprising:

a non-volatile memory comprising:

a first metal layer provided above a semiconductor substrate;

an interlayer insulating film provided above the first metal layer;

a second metal layer, having side surfaces, that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, wherein the underlying layer contacts the side surfaces of the second metal layer and the second metal layer is connected to the first metal layer;

a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer wherein the first barrier layer and the underlying layer form a single inclined surface that contacts an inclined side surface of the second metal layer,

a processor;

a communications component;

a transmitter;

a receiver; and

an antenna connected to the transmitter circuit and the receiver circuit.

9. A media content player comprising:

a non-volatile memory that stores one or more media content items, said non-volatile memory comprising:

a first metal layer provided above a semiconductor substrate;

an interlayer insulating film provided above the first metal layer;

a second metal layer, having side surfaces, that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, wherein the underlying layer contacts the side surfaces of the second metal layer and the second metal layer is connected to the first metal layer;

a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer wherein the first barrier layer and the underlying layer form a single inclined surface that contacts an inclined side surface of the second metal layer,

a user input that enables the selection of one or more of said media item;

a processor coupled to said user input and said storage component that causes the playback of a selected media item, and

one or more playback devices for conveying the playback of said media item.

10. An image acquisition system, comprising:

an image acquisition component for acquiring image data;

a storage component for storing image data, said storage component comprising non-volatile memory comprising:

a first metal layer provided above a semiconductor substrate;

an interlayer insulating film provided above the first metal layer;

a second metal layer, having side surfaces, that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, wherein the underlying layer contacts the side surfaces of the second metal layer and the second metal layer is connected to the first metal layer;

a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer wherein the first barrier layer and the underlying layer form a single inclined surface that contacts an inclined side surface of the second metal layer, and

a display unit for displaying said image data stored in said storage component.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2016
From: CYPRESS SEMICONDUCTOR CORPORATION
To: MONTEREY RESEARCH, LLC
Reel/Frame 040911/0238 →
PARTIAL RELEASE OF SECURITY INTEREST IN PATENTS Recorded Aug 11, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 039708/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 2, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036050/0514 →
SECURITY INTEREST Recorded Mar 21, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 035240/0429 →
RELEASE OF SECURITY INTEREST Recorded Mar 13, 2015
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 035201/0159 →
SECURITY AGREEMENT Recorded Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2006
From: ENDA, TAKAYUKI
To: SPANSION LLC.
Reel/Frame 018195/0647 →
Continuity (2)
Continuation In Part PCTJP2005012059 · Jun 30, 2005
Related Publication 20070001311A1 · Jan 4, 2007