Light sensor receiving light from backside
View Patent ↗The invention is directed to enhancement of performance of a back surface incident type semiconductor device having a light receiving element and a manufacturing method thereof without increasing a manufacturing cost. A supporting body is attached to a front surface of a semiconductor substrate formed with a light receiving element and its pad electrode. Then, the supporting body is etched to form a via hole penetrating the supporting body and exposing the pad electrode. Then, a wiring connected to the pad electrode and extending onto a front surface of the supporting body through the via hole is formed. Lastly, the semiconductor substrate is separated into a plurality of semiconductor dies by dicing. The semiconductor device is mounted so that the supporting body faces a circuit board.
1. A semiconductor device comprising:
a semiconductor die having a front surface and a back surface and comprising a semiconductor portion between the front and the back surfaces, the semiconductor portion constituting the entire semiconductor portion between the front surface and the back surface of the semiconductor die;
a light receiving element formed on the front surface as part of the semiconductor die and configured to receive light coming through the semiconductor portion in which the light receiving element is not formed;
a pad electrode connected with the light receiving element and disposed on the front surface;
a supporting body attached to the front surface and having a via hole standing on the pad electrode;
a wiring disposed in the via hole so that the wiring is in contact with the pad electrode at one end of the via hole and extends from another end of the via hole to cover a portion of a surface of the supporting body; and
a circuit board comprising an electrode that is in contact with the wiring covering the portion of the surface of the supporting body,
wherein an average thickness of the semiconductor portion at the light receiving element and a thickness of the semiconductor portion at the via hole of the supporting body are substantially the same.
2. The semiconductor device of claim 1 , wherein the light receiving element comprises a CCD, a photodiode or an infrared sensor.
3. The semiconductor device of claim 1 , wherein the wiring comprises a conductive paste.
4. The semiconductor device of claim 1 , further comprising a light shield film disposed on the back surface so as not to cover the light receiving element.
5. The semiconductor device of claim 1 , further comprising a color filter disposed on the back surface and transmitting light of a predetermined wavelength band.
6. The semiconductor device of claim 1 , further comprising an adhesive layer attaching the supporting body to the front surface of the semiconductor die.
7. The semiconductor device of claim 4 , wherein the light shield film overlaps the pad electrode.