IP Library Granted Patent US 7,405,164
Granted Patent B2
US 7,405,164 · App. 11/488,706 · Granted Jul 29, 2008

Apparatus and method for removing a photoresist structure from a substrate

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,405,164
App. No.
11/488,706
Granted
Jul 29, 2008
Kind
B2
Abstract

In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

Claims (18)

1. A method of removing a photoresist structure from a substrate, comprising:

supplying water vapor into an enclosed first space to be partially condensed into liquid water on surfaces of the first space,

vaporizing the liquid water in the first space,

supplying water vapor without any liquid water from the first space to a second space,

supplying ozone gas into the second space, and

uniformly applying a mixture of the water vapor and ozone gas from the second space onto the substrate on which the photoresist structure is formed,

wherein the substrate is not disposed in the first space.

2. The method of claim 1 , wherein vaporizing the liquid water in the first space includes vaporizing the liquid water by transferring heat thereto.

3. The method of claim 2 , wherein the heat is transferred to the liquid water so that surfaces within the enclosed first space reach a temperature in a range of about 98° C. to 105° C.

4. The method of claim 1 , further comprising heating the substrate.

5. The method of claim 4 , wherein heating includes heating the substrate to a temperature in a range of about 98° C. to 100° C.

6. The method of claim 1 , wherein supplying water vapor into the first space includes using an inactive gas as a carrier gas.

7. A method of removing a photoresist structure from a substrate, comprising:

partially condensing a water vapor into liquid water within a first space,

vaporizing the liquid water in the first space,

supplying water vapor without liquid water from the first space to a second space containing ozone gas, and

uniformly applying a mixture of the water vapor and ozone gas onto the substrate for removing the photoresist structure, wherein any spot phenomenon occurs within the first space and not on the substrate, and wherein the substrate is not disposed in the first space.

8. The method of claim 7 , wherein a uniform temperature distribution of the mixture is maintained as the mixture contacts the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 19, 2006
From: KIM, IN-GI; HWANG, IN-SEAK; CHUNG, DAE-HYUK; KIM, KYOUNG-HWAN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 018116/0142 →
Priority Claims (1)
KR 10-2005-0066374 · Jul 21, 2005 · national
Continuity (1)
Related Publication 20070020943A1 · Jan 25, 2007