Polymeric barrier removal polishing slurry
View Patent ↗The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The aqueous slurry includes by weight percent, 0.01 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 3 polyvinyl pyrrolidone, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 complexing agent formed during polishing and balance water; and the aqueous slurry has a pH of at least 8.
1. An aqueous slurry useful for chemical mechanical polishing to remove a barrier material from a semiconductor substrate having copper interconnects comprising by weight percent, 0.01 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.002 to 3 polyvinyl pyrrolidone, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 phosphate compound selected from at least one of ammonium phosphate, potassium phosphate and dipotassium phosphate for increasing removal rate of the copper interconnects, 0.0001 to 0.1 ammonium chloride for increasing removal rate of the copper interconnects, 0.001 to 10 copper complexing agent, the copper complexing agent forming with copper during polishing, and balance water; and the aqueous slurry having a pH of at least 8.
2. The aqueous slurry of claim 1 wherein the polyvinyl pyrrolidone has a weight average molecular weight of 1,000 to 1,000,000.
3. The aqueous slurry of claim 1 wherein the slurry includes silica abrasive particles.
4. An aqueous slurry useful for chemical mechanical polishing to remove a barrier material from a semiconductor substrate having copper interconnects comprising by weight percent, 0.05 to 15 oxidizing agent, 0.1 to 40 silica abrasive particles, 0.002 to 2 polyvinyl pyrrolidone, 0.01 to 5 azole inhibitor for decreasing static etch of the copper interconnects, 0.01 to 3 phosphate compound selected from at least one of ammonium phosphate, potassium phosphate and dipotassium phosphate for increasing removal rate of the copper interconnects, 0.0001 to 0.1 ammonium chloride for increasing removal rate of the copper interconnects, 0.01 to 5 organic acid copper complexing agent, the copper complexing agent forming with copper during polishing, and balance water; and the aqueous slurry having a pH of 8 to 12.
5. The aqueous slurry of claim 4 wherein the polyvinyl pyrrolidone has a weight average molecular weight of 1,000 to 500,000.
6. The aqueous slurry of claim 4 wherein the slurry includes silica abrasive particles having an average particle size of less than 100 nm.
7. The aqueous slurry of claim 4 wherein the phosphate compound is dipotassium phosphate.
8. An aqueous slurry useful for chemical mechanical polishing to remove a barrier material from a semiconductor substrate having copper interconnects comprising by weight percent, 0.1 to 10 oxidizing agent, 0.25 to 35 silica abrasive particles, 0.01 to 1.5 polyvinyl pyrrolidone, 0.01 to 2 benzotriazole inhibitor for decreasing static etch of the copper interconnects, 0.02 to 2 phosphate compound selected from at least one of ammonium phosphate, potassium phosphate and dipotassium phosphate for increasing removal rate of the copper interconnects, 0.0001 to 0.1 ammonium chloride for increasing removal rate of the copper interconnects, 0.01 to 5 organic acid copper complexing agent, the copper complexing agent forming with copper during polishing, and balance water; and the aqueous slurry having a pH of 9 to 11.5.
9. The aqueous slurry of claim 8 wherein the complexing agent is citric acid.
10. The aqueous slurry of claim 8 wherein the phosphate compound is dipotassium phosphate.