Method for fabricating Al metal line
View Patent ↗Disclosed is a method for fabricating an Al metal line. The method includes forming an insulating layer on a semiconductor substrate; forming a Ti layer, a bottom TiN layer, an Al layer and a top TiN layer in successive order on the insulating layer; plasma-treating the top TiN layer; forming a photoresist pattern on the plasma-treated top TiN layer; and etching the plasma-treated top TiN layer, the Al layer, the bottom TiN layer, and the Ti layer using the photoresist pattern as an etching mask, thereby forming the Al metal line.
1. A method for fabricating an Al line, comprising the steps of:
forming an insulating layer on a semiconductor substrate;
forming a Ti layer, a bottom TiN layer, an Al layer and a top TiN layer having a crystalline structure, in successive order on the insulating layer;
plasma-treating the top TiN layer to densify the crystalline structure of the top TiN layer;
forming a photoresist pattern on the plasma-treated top TiN layer;
etching the plasma-treated top TiN layer, the Al layer, the bottom TiN layer, and the Ti layer using the photoresist pattern as an etching mask, thereby forming the Al metal line.
2. The method of claim 1 , wherein the plasma-treatment of the top TiN layer utilizes a nitrogen-containing gas.
3. The method of claim 2 , wherein the nitrogen-containing gas comprises at least one of NH 3 , N 2 , and N 2 O.
4. The method of claim 2 , wherein the plasma-treatment is performed under conditions comprising a power of 100˜200 W and a pressure of 3 mTorr˜5 Torr.
5. The method of claim 1 , wherein the top TiN layer is plasma-treated at a power of 100˜200 W.
6. The method of claim 1 , wherein the top TiN layer is plasma-treated at a pressure of 3 mTorr˜5 Torr.
7. The method of claim 2 , wherein the plasma-treatment is performed under conditions comprising NH 3 gas at a flow rate of 10˜500 sccm and N 2 gas at a flow rate of 100˜2000 sccm.
8. The method of claim 1 , wherein plasma-treating the top TiN layer comprises exposing the top TiN layer to a plasma comprising a nitrogen source gas and a hydrogen-containing gas.
9. The method of claim 8 , wherein the nitrogen source gas comprises at least one of N 2 , N 2 O and NO.
10. The method of claim 8 , wherein the hydrogen-containing gas comprises at least one of NH 3 , N 2 H 4 , and HN 3 .
11. The method of claim 8 , wherein the hydrogen-containing gas comprises NH 3 gas at a flow rate of 10˜500 sccm and the nitrogen source gas comprises N 2 gas at a flow rate of 100˜2000 sccm.
12. The method of claim 2 , wherein the plasma-treatment is performed at a temperature of 20˜420° C.
13. The method of claim 2 , wherein the nitrogen-containing gas comprises at least one of NH 3 , N 2 , N 2 O, NO, N 2 H 4 , and HN 3 .
14. The method of claim 13 , wherein the nitrogen-containing gas comprises at least one gas containing nitrogen and at least one gas containing hydrogen.