Probing high-frequency signals
View Patent ↗Apparatus and associated systems and methods may relate to a wide bandwidth cable assembly that may include an active amplification stage to receive high frequency signals (e.g., 1 GHz or above) through a transmission line extending distally to a passive, high density signal probe stage. In an illustrative example, the probe stage may receive multiple analog or digital signals from a device under test (DUT). In some embodiments, the probe stage may include probe pins with integrated series resistance to control signal loading, and an equalizer to shape the signal path's frequency response. The amplification stage may provide a virtual ground reference for a termination impedance that may match the transmission line's impedance and may connect in series with a feedback impedance. In one example, a minimally invasive probe head may facilitate measurement of multiple channels of a high speed data bus with minimal signal distortion and/or attenuation.
1. A waveform processing system comprising:
a transmission line;
a probe module to couple a high frequency signal under test to a distal end of the transmission line; and
a signal processing module having an input connected to a proximal end of the transmission line, wherein the signal processing module terminates the transmission line at a virtual reference node formed by an active feedback network so as to reduce attenuation of the signal.
2. The system of claim 1 , wherein the transmission line comprises a length of flexible cable.
3. The system of claim 1 , wherein the probe module further comprises an equalizer to compensate for at least part of an attenuation characteristic of the transmission line over a frequency range.
4. The system of claim 1 , wherein at least one of the probe module and the signal processing module comprises:
a substantially planar substrate;
a first conductor and a second conductor formed on the substrate;
a dielectric layer comprising a dielectric material formed over the first and second conductors and having a first thickness; and
a region between the first and second conductors, wherein the dielectric layer has a second thickness that is substantially less than the first thickness.
5. The system of claim 4 , wherein the dielectric layer comprises a solder mask.
6. The system of claim 4 , wherein the region extends from the first conductor to the second conductor.
7. The system of claim 4 , wherein one of the conductors comprises a plurality of vias that electrically connect to a reference conductor in another planar layer, wherein each via is separated from at least one of the other vias by no more than one quarter wavelength of the signal within a desired bandwidth.
8. The system of claim 1 , wherein at least one of the probe module and the signal processing module comprises:
a substantially planar substrate layer formed of a dielectric material;
a first conductor and a second conductor formed on the substrate layer; and
a region between the first and second conductors, wherein the substrate layer has a reduced thickness in the region.
9. The system of claim 8 , wherein one of the conductors comprises a plurality of vias that electrically connect to a reference conductor in another planar layer, wherein each via is separated from at least one of the other vias by no more than one quarter wavelength of the signal within a desired bandwidth.
10. The system of claim 1 , wherein the signal processing module comprises an amplifier to form the virtual reference node.
11. The system of claim 1 , wherein the signal processing module increases an amplitude of the signal by a gain greater than one.
12. The system of claim 1 , wherein the virtual reference node comprises a virtual ground reference node.
13. The system of claim 1 , wherein the waveform processing system includes an active probe assembly.
14. The system of claim 1 , wherein the signal comprises a single-ended signal.
15. The system of claim 1 , wherein the signal comprises a differential signal.
16. The system of claim 1 , wherein the signal includes frequencies from about zero to at least about 150 GHz.
17. The system of claim 1 , wherein the signal includes frequencies above at least 5 GHz.
18. The system of claim 1 , wherein the signal includes frequencies from about 5 GHz to about 50 GHz.
19. The apparatus of claim 1 , wherein the signal includes data rates above at least 5 Gbit/sec.
20. A waveform processing system comprising:
a transmission line;
a probe module to couple a high frequency signal under test to a distal end of the transmission line; and
means for actively terminating the signal without substantial attenuation.
21. The system of claim 20 , wherein the terminating means further comprises means for amplifying the signal with a gain greater than unity.
22. The system of claim 20 , wherein the probe module comprises means for reducing the loading of the signal under test.
23. A waveform processing system comprising:
a transmission line;
a probe module to couple a high frequency signal under test to a distal end of the transmission line; and
a signal processing module having an input connected to a proximal end of the transmission line, wherein the signal processing module terminates the transmission line at a virtual reference node so as to reduce attenuation of the signal;
wherein at least one of the probe module and the signal processing module comprises:
a substantially planar substrate;
a first conductor and a second conductor formed on the substrate, wherein one of the conductors comprises a plurality of vias that electrically connect to a reference conductor in another planar layer, wherein each via is separated from at least one of the other vias by no more than one quarter wavelength of the signal within a desired bandwidth;
a dielectric layer comprising a dielectric material formed over the first and second conductors and having a first thickness; and
a region between the first and second conductors, wherein the dielectric layer has a second thickness that is substantially less than the first thickness.
24. A waveform processing system comprising:
a transmission line;
a probe module to couple a high frequency signal under test to a distal end of the transmission line; and
a signal processing module having an input connected to a proximal end of the transmission line, wherein the signal processing module terminates the transmission line at a virtual reference node so as to reduce attenuation of the signal;
wherein at least one of the probe module and the signal processing module comprises:
a substantially planar substrate layer formed of a dielectric material;
a first conductor and a second conductor formed on the substrate layer, wherein one of the conductors comprises a plurality of vias that electrically connect to a reference conductor in another planar layer, wherein each via is separated from at least one of the other vias by no more than one quarter wavelength of the signal within a desired bandwidth; and
a region between the first and second conductors, wherein the substrate layer has a reduced thickness in the region.