Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
View Patent ↗A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and microprocessor.
1. A conductive contact, comprising a substantially voidless metal fill within an opening of about 0.25 μm or less and a high aspect ratio of about 3:1 or greater in an insulating layer, the metal fill overlying a non-metal diffusion barrier layer lining the insulating layer within the opening, the metal fill being reflowed in atomic hydrogen at a temperature of less than about 400° C.
2. The conductive contact of claim 1 , wherein the opening comprises a contact via.
3. The conductive contact of claim 1 , wherein the opening comprises a trench.
4. The conductive contact of claim 1 , wherein the opening comprises a dual damascene structure comprising a trench and a contact via extending from the trench.
5. The conductive contact of claim 1 , wherein the metal fill is directionally deposited.
6. The conductive contact of claim 1 , wherein the metal fill is sputter deposited.
7. The conductive contact of claim 1 , wherein the metal fill is evaporation deposited.
8. A conductive contact, comprising a substantially voidless copper material fill over a non-metal diffusion barrier layer lining an insulating layer within an opening of about 0.25 μm or less and a high aspect ratio of about 3:1 or greater, the copper material fill being reflowed in atomic hydrogen at a temperature of less than about 400° C.
9. A conductive contact, comprising a substantially voidless copper material fill over a silicon oxynitride diffusion barrier layer lining a silicon oxyfluoride layer within an opening of about 0.25 μm or less and a high aspect ratio of about 3:1 or greater, the copper material fill being reflowed in atomic hydrogen at a temperature of less than about 400° C.
10. A conductive contact, comprising a substantially voidless conductive metal fill overlying a non-metal diffusion barrier layer lining an insulating layer within an opening of about 0.25 μm or less and a high aspect ratio of about 3:1 or greater, the conductive metal fill being reflowed in atomic hydrogen at a temperature of less than about 400° C.
11. An interlevel interconnect, comprising a substantially voidless conductive metal fill overlying a non-metal diffusion barrier layer lining an insulating layer within an opening of about 0.25 μm and an aspect ratio of about 3:1 or greater, the conductive metal fill being reflowed in atomic hydrogen at a temperature of less than about 400° C.
12. A semiconductor structure, comprising a dual damascene structure in an insulating layer, the dual damascene structure comprising a trench and a contact via extending from the trench, said contact via having an opening of about 0.25 μm or less and an aspect ratio of about 3:1 or greater, a non-metal diffusion barrier layer lining the insulating layer within the trench and the contact via, and a substantially voidless conductive metal fill overlying the non-metal diffusion barrier layer and filling the trench and the contact via, the conductive metal fill being reflowed in atomic hydrogen at a temperature of less than about 400° C.
13. An integrated circuit, comprising an interconnect structure in electrical contact with a conductive element, the interconnect structure comprising a substantially voidless conductive metal fill within an opening of about 0.25 μm or less and an aspect ratio of about 3:1 or greater in an insulating layer, the conductive metal fill overlying a non-metal diffusion barrier layer lining the insulating layer within the opening, and being reflowed in atomic hydrogen at a temperature of less than about 400° C.
14. An integrated circuit, comprising an interconnect structure in electrical contact with a conductive element, the interconnect structure comprising a substantially voidless conductive metal fill within an opening of about 0.25 μm or less and an aspect ratio of about 3:1 or greater in an insulating layer, the conductive metal fill overlying a non-metal diffusion barrier layer lining the insulating layer within the opening, and being directionally deposited and reflowed in atomic hydrogen at a temperature of less than about 400° C.
15. An integrated circuit, comprising an interconnect structure in electrical contact with a conductive element, the interconnect structure comprising a substantially voidless copper fill within an opening of about 0.25 μm or less and an aspect ratio of about 3:1 or greater in an insulating layer, the copper fill overlying a non-metal nitride diffusion barrier layer lining the insulating layer within the opening, and being reflowed in atomic hydrogen at a temperature of less than about 400° C.
16. An integrated circuit, comprising an interconnect in electrical contact with an array of memory cells and internal circuitry, the interconnect comprising a substantially voidless conductive metal fill within an opening of about 0.25 μm or less and an aspect ratio of about 3:1 or greater in an insulating layer, the conductive metal fill overlying a non-metal diffusion barrier layer lining the insulating layer within the opening, and being reflowed in atomic hydrogen at a temperature of less than about 400° C.
17. An integrated circuit, comprising an interconnect in electrical contact with an array of memory cells and internal circuitry, the interconnect comprising a substantially voidless conductive metal fill within an opening of about 0.25 μm or less and an aspect ratio of about 3:1 or greater in an insulating layer, the conductive metal fill overlying a non-metal diffusion barrier layer lining the insulating layer within the opening, and being directionally deposited, and reflowed in atomic hydrogen at a temperature of less than about 400° C.
18. A wafer, comprising a substantially voidless interconnect structure comprising a conductive metal fill within an opening of about 0.25 μm or less and an aspect ratio of about 3:1 or greater in an insulating layer, the conductive metal fill overlying a non-metal diffusion barrier layer lining the insulating layer within the opening, and being directionally deposited, and reflowed in atomic hydrogen at a temperature of less than about 400° C.
19. A system comprising:
a microprocessor; and
a memory device coupled to the microprocessor, the memory device comprising an interconnect comprising a substantially voidless conductive metal fill within an opening of about 0.25 μm or less and an aspect ratio of about 3:1 or greater in an insulating layer, the conductive metal fill overlying a non-metal diffusion barrier layer lining the insulating layer within the opening, and being reflowed in atomic hydrogen at a temperature of less than about 400° C.
20. A system comprising:
a microprocessor; and pg. 17
a memory device coupled to the microprocessor, the memory device comprising an interconnect comprising a substantially voidless conductive material layer within an opening of about 0.25 μm or less and an aspect ratio of about 3:1 or greater in an insulating layer, the conductive metal fill overlying a non-metal diffusion barrier layer lining the insulating layer within the opening, and being directionally deposited, and reflowed in atomic hydrogen at a temperature of less than about 400° C.
21. A system comprising:
a microprocessor; and
a memory device coupled to the microprocessor, the memory device comprising an interconnect comprising a substantially voidless copper material-fill within an opening of about 0.25 μm or less and an aspect ratio of about 3:1 or greater in an insulating layer, the copper material fill overlying a non-metal diffusion barrier layer lining the insulating layer within the opening, and being reflowed in atomic hydrogen at a temperature of less than about 400° C.
22. A system comprising:
a microprocessor; and
a memory device coupled to the microprocessor, the memory device comprising an interconnect comprising a substantially voidless copper material fill within an opening of about 0.25 μm or less and an aspect ratio of about 3:1 or greater in a silicon oxyfluoride layer, the copper material fill overlying a silicon oxynitride diffusion barrier layer lining the silicon oxyfluoride layer within the opening, and being reflowed in atomic hydrogen at a temperature of less than about 400° C.