CMP pad having unevenly spaced grooves
View Patent ↗A chemical mechanical polishing pad ( 100 ) having a circular polishing track ( 124 ) and a concentric center ( 116 ). The polishing pad ( 100 ) includes a polishing layer ( 104 ) having a groove pattern containing a plurality of grooves ( 128 ) each extending through the polishing track ( 124 ). The plurality of grooves have an angular pitch that varies in a circumferential direction about the concentric center ( 116 ) of the pad ( 100 ) and the radial pitch between all adjacent grooves ( 128 ) within the wafer track ( 124 ) is unequal.
1. A polishing pad, comprising:
a) a polishing layer configured for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium, the polishing layer including a polishing surface having a concentric center, a wafer track defined thereon during polishing of a wafer and an outer periphery, the wafer track having an inner boundary and an outer boundary spaced from the inner boundary;
b) a plurality of grooves located in the polishing surface, each groove of the plurality of grooves extending through the wafer track so as to cross each of the inner boundary and the outer boundary, the plurality of grooves having an angular pitch that varies in a predetermined manner where radial pitch between grooves measured in a radial direction from the concentric center to the outer periphery is unequal for all adjacent grooves within the wafer track; and
c) a plurality of groove sets in the wafer track, each of the plurality of groove sets being formed by the plurality of grooves, having at least one intra-set pitch angle and having adjacent inter-set pitch angles, at least some of the inter-set pitch angles differing from the at least one intra-set pitch of at least some of the plurality of groove sets.
2. The polishing pad according to claim 1 , wherein the at least one intra-set pitch angle is substantially the same across the plurality of sets.
3. The polishing pad according to claim 2 , wherein the inter-set pitch angles are substantially identical to one another.
4. The polishing pad according to claim 1 , wherein the plurality of grooves are arranged into a plurality of groove sets each having a plurality of intra-set pitch angles that differ from one another.
5. The polishing pad according to claim 4 , wherein the plurality of intra-set pitch angles are repeated among the plurality of groove sets.
6. The polishing pad according to claim 1 , wherein each of the plurality of grooves defines a spiral curve with a constant angular pitch within the wafer track.
7. A polishing pad, comprising:
a) a polishing layer configured for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium, the polishing layer including a polishing surface having a concentric center, a wafer track defined thereon during polishing of a wafer and an outer periphery, the wafer track having an inner boundary and an outer boundary spaced from the inner boundary;
b) a plurality of grooves located in the polishing surface, each groove of the plurality of grooves extending through the wafer track so as to cross each of the inner boundary and the outer boundary, the plurality of grooves having an angular pitch that varies in a predetermined manner where radial pitch between grooves measured in a radial direction from the concentric center to the outer periphery is unequal for all adjacent grooves within the wafer track; and
c) a plurality of groove sets in the wafer track, each of the plurality of groove sets being formed by at least three grooves and having at least one intra-set pitch angle, and the wafer track includes at least three groove sets.
8. The polishing pad according to claim 7 , wherein the at least one intra-set pitch angle has a value that is repeated for each of the plurality of groove sets.
9. The polishing pad according to claim 7 wherein each of the plurality of grooves defines a spiral curve with a constant angular pitch within the wafer track.