Precursors for depositing silicon containing films
View Patent ↗A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula: [R 1 2 N—NH] n Si(R 2 ) 4-n where each R 1 is independently selected from alkyl groups of C 1 to C 6 ; each R 2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.
1. A precursor composition for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide, the composition comprising:
a hydrazinosilane of the formula:
[R 1 2 N—NH] n Si(R 2 ) 4-n
where each R 1 is independently selected from alkyl groups of C 1 to C 6 ; each R 2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4; and
a nitrogen-containing compound selected from the group consisting of ammonia, nitrogen, hydrazine, and mixtures thereof.
2. The precursor composition of claim 1 wherein nitrogen-containing compound is ammonia.
3. The precursor composition of claim 2 wherein the molar ratio of ammonia to the hydrazinosilane is greater than zero.
4. The precursor composition of claim 1 wherein each R 1 is independently selected from the group consisting of methyl and ethyl; and each R 2 is independently selected from the group consisting of hydrogen, methyl, ethyl, propyl, iso-propyl, n-butyl, iso-butyl, tert-butyl, allyl and phenyl.
5. The precursor composition of claim 1 wherein the hydrazinosilane is selected from the group consisting of: Bis(1, 1-dimethylhydrazino)methylsilane, Tris(1, 1-dimethylhydrazino)silane, Tris(1, 1-dimethylhydrazino)-t-butylsilane, Tris(1, 1-dimethylhydrazino)s-butylsilane, Tris(1, 1-dimethylhydrazino)ethylsilane, Bis(1, 1-dimethylhydrazino)ethylsilane, Bis(1, 1-dimethylhydrazino)lso-propylsilane, Bis(1, 1-dimethylhydrazino)allylsilane, Bis(1, 1-dimethylhydrazino)silane, Tetrakis(1, 1-dimethylhydrazino)silane, N,N′,N″-Tris(dimethylamino)cyclotrisilazane, N,N′,N″,N″′-Tetrakis(dimethylamino)cyclotrisilazane, Tris(1, 1-dimethylhydrazino) Iso-propylsilane, Tris(1, 1-dimethylhydrazino)allylsilane and mixtures thereof.
6. The precursor composition of claim 1 wherein the hydrazinosilane is Tris(1, 1-dimethylhydrazino)silane.
7. The precursor composition of claim 1 wherein the hydrazinosilane is Tris(1, 1-dimethylhydrazino)-t-butylsilane.
8. The precursor composition of claim 1 wherein the hydrazinosilane is Tris(1, 1-dimethylhydrazino)-s-butylsilane.
9. The precursor composition of claim 1 wherein the hydrazinosilane is Bis(1, 1-dimethylhydrazino)-iso-propylsilane.
10. The precursor composition of claim 1 wherein the hydrazinosilane is Bis(1, 1-dimethylhydrazino)allylsilane.
11. The precursor composition of claim 1 wherein the hydrazinosilane is Bis(1, 1-dimethylhydrazino)silane.
12. The precursor composition of claim 1 wherein the hydrazinosilane is Tetrakis(1, 1-dimethylhydrazino)silane.
13. The precursor composition of claim 1 wherein the hydrazinosilane is N,N′,N″-Tris(dimethylamino)cyclotrisilazane.
14. The precursor composition of claim 1 wherein the hydrazinosilane is Tris(1, 1-dimethylhydrazino)-iso-propylsilane.
15. The precursor composition of claim 1 wherein the hydrazinosilane is Tris(1, 1-dimethylhydrazino)allylsilane.
16. A precursor composition for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide, the composition consisting essentially of:
ammonia; and
a hydrazinosilane selected from the group consisting of: Bis(1, 1-dimethylhydrazino)methylsilane, Tris(1, 1-dimethylhydrazino)silane, Tris(1, 1-dimethylhydrazino)-t-butylsilane, Tris(1, 1-dimethylhydrazino)s-butylsilane, Tris(1, 1-dimethylhydrazino)ethylsilane, Bis(1, 1-dimethylhydrazino)ethylsilane, Bis(1, 1-dimethylhydrazino)Iso-propylsilane, Bis(1, 1-dimethylhydrazino)allylsilane, Bis(1, 1-dimethylhydrazino)silane, Tetrakis(1, 1-dimethylhydrazino)silane, N,N′,N″-Tris(dimethylamino)cyclotrisilazane, N,N′,N″,N″′-Tetrakis(dimethylam ino)cyclotrisilazane, Tris(1, 1-dimethylhydrazino)Iso-propylsilane, Tris(1, 1-dimethylhydrazino)allylsilane and mixtures thereof.
17. The precursor composition of claim 16 wherein the hydrazinosilane is Tris(1,1-dimethylhydrazino)tert-butylsilane.
18. The precursor composition of claim 16 wherein the hydrazinosilane is Tris(1,1-dimethylhydrazino)ethylsilane.
19. The precursor composition of claim 16 wherein the hydrazinosilane is Bis(1,1-dimethylhydrazino)ethylsilane.