IP Library Granted Patent US 7,411,276
Granted Patent B2
US 7,411,276 · App. 11/514,264 · Granted Aug 12, 2008

Photosensitive device

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Quick Facts
Patent No.
US 7,411,276
App. No.
11/514,264
Granted
Aug 12, 2008
Kind
B2
Abstract

A photosensitive device having at least an insulator layer including a plurality of photoreceiving regions disposed on a substrate. A plurality of conductive patterns is disposed on the insulator layer without covering the photoreceiving regions. A flattened dielectric layer is disposed on the conductive patterns and the insulator layer, wherein a surface of the dielectric layer is higher than a surface of the conductive patterns in a range between 2000 Å to 4000 Å.

Claims (9)

1. A photosensitive device, comprising:

a substrate;

at least an insulator layer comprising a plurality of photoreceiving regions disposed on the substrate;

a plurality of conductive patterns disposed on the insulator layer without covering the photoreceiving regions; and

a flattened dielectric layer disposed on the conductive patterns and the insulator layer,

wherein a surface of the dielectric layer is higher than a surface of the conductive patterns in a range between 2000 Å to 4000 Å.

2. The photosensitive device as claimed in claim 1 , wherein the dielectric layer is oxide or oxynitride.

3. The photosensitive device as claimed in claim 1 , wherein the conductive patterns have a thickness of 8000 Å-10000 Å.

4. The photosensitive device as claimed in claim 1 , further comprising a color filter layer on the dielectric layer, an upper dielectric layer on the color filter layer, a plurality of microlenses on the color filter layer, and a protective layer on the microlenses.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 16, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049757/0575 →
CHANGE OF NAME Recorded Jun 26, 2019
From: POWERCHIP SEMICONDUCTOR CORP.
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 049602/0564 →