Method of manufacturing silicon wafer
View Patent ↗The present invention provides a method of manufacturing a silicon wafer where a defect does not exist at a wafer surface layer part on which a device is formed, without affecting productivity and production costs of the wafer. An ingot of a silicon single crystal is grown by way of Czochralski single crystal pulling method, this silicon single crystal ingot is sliced to produce a wafer, then a surface layer of the wafer is annealed for between 0.01 microseconds and 10 seconds (inclusive) by means of a laser spike annealing apparatus such that a temperature of a wafer surface layer part is between 1250° C. and 1400° C. (inclusive).
1. A method of manufacturing a silicon wafer, wherein an ingot of a silicon single crystal is grown by way of Czochralski single crystal pulling method, said silicon single crystal ingot is sliced to produce a wafer, then a surface layer of said wafer is annealed for between 0.01 microseconds and 0.8 seconds (inclusive) by means of a laser spike annealing apparatus such that a temperature of a wafer surface layer part is between 1250° C. and 1400° C. (inclusive).
2. The method of manufacturing the silicon wafer as claimed in claim 1 , wherein said laser spike annealing process is carried out in an atmosphere of a mixed gas including any one of or at least two of reducing gas, rare gas, and nitrogen gas.
3. The method of manufacturing the silicon wafer as claimed in claim 2 , wherein said atmosphere gas is hydrogen gas or a mixed gas of hydrogen gas and argon gas.
4. The method of manufacturing the silicon wafer as claimed in claim 1 , wherein growth of said ingot by way of said Czochralski single crystal pulling method is carried out under growth conditions including a growth condition where a void-like defect takes place.
5. The method of manufacturing the silicon wafer as claimed in claim 2 , wherein growth of said ingot by way of said Czochralski single crystal pulling method is carried out under growth conditions including a growth condition where a void-like defect takes place.
6. The method of manufacturing the silicon wafer as claimed in claim 3 , wherein growth of said ingot by way of said Czochralski single crystal pulling method is carried out under growth conditions including a growth condition where a void-like defect takes place.