IP Library Granted Patent US 7,486,391
Granted Patent B2
US 7,486,391 · App. 11/520,538 · Granted Feb 3, 2009

System and method for haze control in semiconductor processes

Assignees: Samsung Austin Semiconductor, L.P.; Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,486,391
App. No.
11/520,538
Granted
Feb 3, 2009
Kind
B2
Abstract

A method for haze control on a semiconductor reticle, the method including performing a reticle inspection of a semiconductor reticle to detect haze formation on a periodic basis, performing a wafer inspection to detect haze defects, forecasting haze formation, and cleaning the semiconductor reticle. Also included is a haze forecasting method for haze control on a semiconductor reticle, including scanning a plurality of semiconductor wafers, identifying repeating defects in the semiconductor wafers, storing the repeating defects in a database as known repeating defects, and identifying an additional repeating defect that is not a known repeating defect, the additional repeating defect caused by semiconductor reticle haze.

Claims (42)

1. A haze forecasting method for haze control on a semiconductor reticle, comprising:

scanning a plurality of semiconductor wafers;

identifying repeating defects in the semiconductor wafers;

storing the repeating defects in a database as known repeating defects; and

using the repeating defects stored in the database to identify subsequent repeating defects as either a known repeating defect or a new repeating defect,

wherein non-repeating defects in the semiconductor wafers are not stored in the database.

2. The method of claim 1 , wherein the spatial coordinates of each repeating defect are stored.

3. The method of claim 1 , wherein the repeating defects in the semiconductor wafers are identified by applying a repeater algorithm.

4. The method of claim 1 , wherein known repeating defects and new repeating defects are differentiated from one another by the presence of a flag.

5. The method of claim 1 , wherein storing the repeating defects in a database as known repeating defects comprises:

storing an image of each known repeating defect; and

cataloguing each known repeating defect.

6. The method of claim 1 , wherein non-repeating defects are identified as false defects.

7. A method of reticle repeater filtering, comprising:

taking a raw scan of a semiconductor wafer;

applying a repeater algorithm to the raw scan to identify one or more repeating defects;

classifying the identified one or more repeating defects as known repeating defects;

storing the known repeating defects in a database; and

using the database to classify subsequently identified repeating defects as either a known repeating defect or a new repeating defect,

wherein non-repeating defects in the semiconductor wafer are not stored in the database.

8. The method of claim 7 , wherein storing the known repeating defects in a database comprises:

storing an image of each known repeating defect; and

cataloguing each known repeater.

9. The method of claim 7 further comprising:

storing a spatial coordinate in relation to a shot grid for each known repeating defect.

10. The method of claim 7 , wherein new repeating defects are differentiated from known repeating defects on the raw scan.

11. The method of claim 10 , wherein new repeating defects are differentiated from known repeating defects on the raw scan by a flag.

12. The method of claim 7 , wherein non-repeating defects are identified as false defects.

13. A method of filtering repeating reticle defects:

identifying one or more repeating defects in a raw scan of a semiconductor wafer;

storing the one or more identified repeating defects as known repeating defects; and

using the identified known repeating defects to classify a subsequently identified repeating defect as a known repeating defect or a new repeating defect,

wherein non-repeating defects in the semiconductor wafer are not stored.

14. The method of claim 13 , wherein the one or more repeating defects in the raw scan are identified by applying a repeater algorithm to the raw scan.

15. The method of claim 13 , wherein storing the one or more identified repeating defects as known repeating defects comprises:

storing an image of each known repeating defect in a database; and

cataloguing each known repeater in the database.

16. The method of claim 15 further comprising:

storing a spatial coordinate in relation to a shot grid for each known repeating defect.

17. The method of claim 13 , wherein new repeating defects are differentiated from known repeating defects on the raw scan.

18. The method of claim 17 , wherein new repeating defects are differentiated from known repeating defects on the raw scan by a flag.

19. The method of claim 13 , wherein non-repeating defects are identified as false defects.

Assignments (2)
CHANGE OF NAME Recorded Aug 31, 2018
From: SAMSUNG AUSTIN SEMICONDUCTOR, L.P.
To: SAMSUNG AUSTIN SEMICONDUCTOR, LLC
Reel/Frame 047006/0105 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2006
From: CHEN, XIAOMING; NGUYEN, MAIHAN; ARASAKI, OSAMU; MARAQUIN, TAMMY; SAWYER, DANIEL; MORRISON, PEDRO
To: SAMSUNG AUSTIN SEMICONDUCTOR, L.P.; SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 018315/0815 →
Continuity (1)
Related Publication 20080062414A1 · Mar 13, 2008