IP Library Granted Patent US 7,531,855
Granted Patent B2
US 7,531,855 · App. 11/525,160 · Granted May 12, 2009

Multi-chip device and method for manufacturing the same

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Quick Facts
Patent No.
US 7,531,855
App. No.
11/525,160
Granted
May 12, 2009
Kind
B2
Abstract

A multi-chip device includes LED sensors for sensing light separated by a predetermined interval in a wafer, LEDs for emitting light formed over the wafer respectively corresponding to the LED sensors, a driving circuit formed between the LEDs over the wafer, an insulating film over the wafer, and trenches in the insulating film exposign the LEDs.

Claims (11)

1. A multi-chip device, comprising:

a first chip including a first wafer, a first light sensor formed in the first wafer, a first light-emitting device formed over the first wafer, and a first trench for exposing the first light-emitting device; and

a second chip including a second wafer, a second light sensor formed in the second wafer stacked over the first chip and for sensing an optical signal emitted from the first light-emitting device, a second light-emitting device formed over the second wafer, and a second trench for exposing the second light-emitting device,

wherein the optical signal is transmitted to the second light sensor through the first trench and the second wafer; and

wherein the first trench transfers the optical signal to an undersurface of the second wafer.

2. The device of claim 1 , wherein the first light sensor is formed in the area in which the upper-surface of the first wafer is etched to a predetermined depth.

3. The device of claim 1 , wherein the first light-emitting device is formed over the first light sensor.

4. The device of claim 1 , wherein the first chip further includes a first driving circuit formed over the first wafer except the area of the first trench and for outputting an electric signal to the first light-emitting device to generate the optical signal.

5. The device of claim 4 , wherein the first chip further includes a first passivation layer formed over the first driving circuit.

6. The device of claim 1 , wherein the second chip further includes a second driving circuit formed over the second wafer except the second trench and for receiving sensing data from the second light sensor.

7. The device of claim 6 , wherein the second chip further includes a second passivation layer formed over the second driving circuit.

Assignments (4)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE IS HYNIX SEMICONDUCTOR INC. NOT HYNIX-SEMICONDUCTOR INC. THERE IS NO HYPHEN IN THE NAME. PREVIOUSLY RECORDED ON REEL 67328 FRAME 814. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF NAME. Recorded May 14, 2024
From: HYNIX SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067412/0482 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067369/0832 →
CHANGE OF NAME Recorded May 6, 2024
From: HYNIX-SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067328/0814 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2006
From: KANG, HEE BOK
To: HYNIX SEMICONDUCTOR INC.
Reel/Frame 018335/0420 →