CMOS image sensor and method for manufacturing the same
View Patent ↗A CIS and a method for manufacturing the same are provided. The CIS includes an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon; a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other; a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and a microlens formed on each of the plurality of color filters.
1. A method for manufacturing a CIS (complementary metal oxide silicon image sensor), the method comprising:
forming an interlayer insulation layer on a substrate having a photodiode and a transistor;
forming a first color filter on the interlayer insulation layer;
forming metal sidewalls on both sides of the first color filter;
forming a second color filter on one side of the first color filter with the metal sidewall interposed between the first color filter and the second color filter;
forming a third color filter on another side of the first color filter with the metal sidewall interposed between the first color filter and the third color filter; and
forming a microlens on each of the first, second and third color filters.
2. The method according to claim 1 , wherein forming a first color filter comprises:
applying a green photosensitive material on the interlayer insulation layer, and
selectively patterning the green photosensitive material.
3. The method according to claim 1 , wherein the metal sidewall is formed of an opaque metal.
4. The method according to claim 3 , wherein the opaque metal is one selected from the group consisting of Al, Cr, Mo, and Ti.
5. The method according to claim 1 , wherein forming metal sidewalls comprises:
depositing a metal layer to a thickness of 500 to 2000 Å; and
performing a blanket etch process on the metal layer.
6. The method according to claim 1 , further comprising forming a planarization layer on an entire surface of the substrate including the first, second, and third color filters.
7. The method according to claim 1 , further comprising hardening the microlenses.
8. A method for manufacturing a CIS (complementary metal oxide silicon image sensor), the method comprising:
forming an interlayer insulation layer on a substrate having a photodiode and a transistor;
forming green, red, and blue color filters on the interlayer insulation layer, the green, red, and blue color filters being spaced a predetermined interval apart from each other;
forming metal sidewalls on the sides of each of the green, red, and blue color filters; and
forming a microlens on each of the green, red, and blue color filters.
9. The method according to claim 8 , wherein forming metal sidewalls comprises:
forming a metal layer on an entire surface of the substrate to fill the predetermined intervals between the green, red, and blue color filters; and
planarizing the metal layer to expose the green, red and blue color filters.
10. The method according to claim 9 , wherein planarizing the metal layer comprises performing a CMP (chemical mechanical processing) on the metal layer.
11. The method according to claim 9 , wherein planarizing the metal layer comprises performing a blanket etch process on the metal layer.
12. The method according to claim 8 , wherein the metal sidewall is formed of a metal selected from the group consisting of Al, Cr, Mo, and Ti.