Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereof
View Patent ↗The dielectric constants of SiC and SiCN that are currently the subjects of much investigation are both 4.5 to 5 or so and that of SiOC, 2.8 to 3.0 or so. With further miniaturization of the interconnection size and the spacing of interconnections brought about by the reduction in device size, there have arisen strong demands that dielectric constants should be further reduced. Furthermore, because the etching selection ratio of SiOC to SiCN as well as that of SiOC to SiC are small, if SiCN or SiC is used as the etching stopper film, the surface of the metal interconnection layer may be oxidized at the time of photoresist removal, which gives rise to a problem of high contact resistance. The present invention relates to an organic film made of one of SiOCH, SiCHN and SiCH that is formed using, as a source, a polyorganosilane whose C/Si ratio is at least 5 or greater and molecular weight is 100 or greater, and a semiconductor device wherein such an organic insulating film is used, and more particularly to a semiconductor device having a trench structure.
1. A semiconductor device having a trench interconnection structure, which comprises:
an interlayer insulating film formed on a semiconductor substrate,
a trench interconnection formed in the interlayer insulating film, and
a barrier insulating film formed so as to cover over the trench interconnection,
wherein the barrier insulating film is formed by using a SiCHN film containing C═C bonds therein.
2. The semiconductor device as claimed in claim 1 , wherein the interlayer insulating film is formed by using a SiOCH film containing C═C bonds therein.
3. The semiconductor device as claimed in claim 1 , wherein the barrier insulating film is a layered film made of the SiCHN film and a SiCH film.
4. The semiconductor device as claimed in claim 1 , wherein the SiCHN film containing C═C bonds therein has a C/Si composition ratio of 1.0 to 1.3.
5. The semiconductor device as claimed in claim 1 , wherein the SiCHN film containing C═C bonds therein has a density of 1.4 g/cm 3 to 1.6 g/cm 3 .
6. A semiconductor device having a trench interconnection structure, which comprises:
an interlayer insulating film formed on a semiconductor substrate, and
a trench interconnection formed in the interlayer insulating film,
wherein the interlayer insulating film is a layered insulating film in which an etching stopper film is included, and the etching stopper film is formed by using a SiCHN film containing C═C bonds therein.
7. The semiconductor device as claimed in claim 6 , wherein the interlayer insulating film is a layered insulating film comprising a SiOCH film containing C═C bonds therein and the etching stopper film.
8. The semiconductor device as claimed in claim 6 , wherein the etching stopper film is a layered film made of the SiCHN film and a SiCH film.
9. The semiconductor device as claimed in claim 6 , wherein the SiCHN film containing C═C bonds therein has a C/Si composition ratio of 1.0 to 1.3.
10. The semiconductor device as claimed in claim 6 , wherein the SiCHN film containing C═C bonds therein has a density of 1.4 g/cm 3 to 1.6 g/cm 3 .
11. A semiconductor device having a trench interconnection structure, which comprises:
a first insulating film formed on a semiconductor substrate,
a first trench interconnection formed in the first insulating film,
a second insulating film,
a third insulating film,
a second trench interconnection formed in the third insulating film, and
a via plug that is formed in the second insulating film and connects the first trench interconnection and the second trench interconnection,
wherein the first insulating film is a layered insulating film comprising a SiOCH film and an etching stopper film, and the etching stopper film is formed by using a SiCHN film containing C═C bonds therein.
12. The semiconductor device as claimed in claim 11 , wherein the SiOCH film contains C═C bonds therein.
13. The semiconductor device as claimed in claim 11 , wherein the SiCHN film containing C═C bonds therein has a C/Si composition ratio of 1.0 to 1.3.
14. The semiconductor device as claimed in claim 11 , wherein the SiCHN film containing C═C bonds therein has a density of 1.4 g/cm 3 to 1.6 g/cm 3 .
15. A semiconductor device having a trench interconnection structure, which comprises:
a first insulating film formed on a semiconductor substrate,
a first trench interconnection formed in the first insulating film,
a second insulating film,
a third insulating film,
a second trench interconnection formed in the third insulating film, and
a via plug that is formed in the second insulating film and connects the first trench interconnection and the second trench interconnection,
wherein the second insulating film is a layered insulating film comprising a SiOCH film and a barrier insulating film, and the barrier insulating film is formed by using a SiCHN film containing C═C bonds therein.
16. The semiconductor device as claimed in claim 15 , wherein the SiOCH film contains C═C bonds therein.
17. The semiconductor device as claimed in claim 15 , wherein the SiCHN film containing C═C bonds therein has a C/Si composition ratio of 1.0 to 1.3.
18. The semiconductor device as claimed in claim 15 , wherein the SiCHN film containing C═C bonds therein has a density of 1.4 g/cm 3 to 1.6 g/cm 3 .
19. A semiconductor device having a trench interconnection structure, which comprises:
a first insulating film formed on a semiconductor substrate,
a first trench interconnection formed in the first insulating film,
a second insulating film,
a third insulating film,
a second trench interconnection formed in the third insulating film, and
a via plug that is formed in the second insulating film and connects the first trench interconnection and the second trench interconnection,
wherein the second insulating film is a layered insulating film comprising a SiOCH film and an etching stopper film, and the etching stopper film is formed by using a SiCHN film containing C═C bonds therein.
20. The semiconductor device as claimed in claim 19 , wherein the SiOCH film contains C═C bonds therein.
21. The semiconductor device as claimed in claim 19 , wherein the SiCHN film containing C═C bonds therein has a C/Si composition ratio of 1.0 to 1.3.
22. The semiconductor device as claimed in claim 19 , wherein the SiCHN film containing C═C bonds therein has a density of 1.4 g/cm 3 to 1.6 g/cm 3 .
23. A semiconductor device having a trench interconnection structure, which comprises:
a first insulating film formed on a semiconductor substrate,
a first trench interconnection formed in the first insulating film,
a second insulating film,
a third insulating film,
a second trench interconnection formed in the third insulating film, and
a via plug that is formed in the second insulating film and connects the first trench interconnection and the second trench interconnection,
wherein the third insulating film is a layered insulating film comprising a SiOCH film and an etching stopper film, and the etching stopper film is formed by using a SiCHN film containing C═C bonds therein.
24. The semiconductor device as claimed in claim 23 , wherein the SiOCH film contains C═C bonds therein.
25. The semiconductor device as claimed in claim 23 , wherein the SiCHN film containing C═C bonds therein has a C/Si composition ratio of 1.0 to 1.3.
26. The semiconductor device as claimed in claim 23 , wherein the SiCHN film containing C═C bonds therein has a density of 1.4 g/cm 3 to 1.6 g/cm 3 .