Method of manufacturing semiconductor device carrying out ion implantation before silicide process
An N-type source region and an N-type drain region of N-channel type MISFETs are implanted with ions (containing at least one of F, Si, C, Ge, Ne, Ar and Kr) with P-channel type MISFETs being covered by a mask layer. Then, each gate electrode, source region and drain region of the N- and P-channel type MISFETs are subjected to silicidation (containing at least one of Ni, Ti, Co, Pd, Pt and Er). This can suppress a drain-to-body off-leakage current (substrate leakage current) in the N-channel type MISFETs without degrading the drain-to-body off-leakage current in the P-channel type MISFETs.
1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) forming an N-channel type MISFET and a P-channel type MISFET on a semiconductor substrate, said N-channel type MISFET comprising a laminated structure of a first gate insulation film and a first gate electrode, a first sidewall at a side surface of said first gate electrode of the N-channel type MISFET, first and second lightly doped drain (LDD) regions sandwiching a region of said semiconductor substrate which is under said first gate insulation film of the N-channel type MISFET, said P-channel type MISFET comprising a laminated structure of a second gate insulation film and a second gate electrode, a second sidewall at a side surface of said second gate electrode of the P-channel type MISFET, third and fourth LDD regions sandwiching a region of said semiconductor substrate which is under said second gate insulation film of the P-channel type MISFET;
(b) after step (a), forming a P-type source region and a P-type drain region in said P-channel type MISFET;
(c) after step (a), forming an N-type source region and an N-type drain region in said N-channel type MISFET;
(d) after steps (b) and (c), forming a mask layer for selectively covering said P-channel type MISFET without covering said N-channel type MISFET;
(e) after step (d), implanting ions into said N-type source region and said N-type drain region of said N-channel type MISFET with said P-channel type MISFET being covered by said mask layer; and
(f) after step (e), carrying out silicidation of said gate electrode of the N-channel type MISFET, said N-type source region and said N-type drain region implanted with said ions in said N-channel type MISFET, said second gate electrode of the P-channel type MISFET and said P-type source region and said P-type drain region in said P-channel type MISFET.
2. The method according to claim 1 , further comprising the steps of:
(g) prior to said step (f), forming a silicidation stop film for covering part of said semiconductor substrate to be prevented from being silicided in said silicidation so as to cover surfaces of said P-channel type MISFET, said N-channel type MISFET and said semiconductor substrate;
(h) carrying out selective anisotropic etching on said silicidation stop film, so that parts of said silicidation stop film remain on said part to be prevented from being silicided, side of said laminated structure of said P-channel type MISFET and side of said laminated structure of said N-channel type MISFET; and
(i) prior to said step (f), cleaning said remaining parts of said silicidation stop film and part to be subjected to said silicidation.
3. The method according to claim 1 , wherein
said ions implanted in said step (e) are carbon, germanium, neon, argon or krypton.
4. The method according to claim 1 , wherein
said silicidation in step (f) is carried out using a metal film comprising at least one of nickel, titanium, cobalt, palladium, platinum and erbium.
5. The method according to claim 1 , wherein
said ions implanted in said step (e) are fluorine.
6. The method according to claim 1 , wherein
said ions implanted in said step (e) are silicon.