Connection structure and method for fabricating the same
View Patent ↗There is provided a connection structure between a Si electrode (Si member) and an Al wire (Al member). Between the Si electrode and the Al wire, a first part and second parts are present in interposed relation. Each of the first and second parts is in contact with the Si electrode and with the Al wire. In the first part, a Si oxide layer and an Al oxide layer are present. The Si oxide layer is in contact with the Si electrode. The Al oxide layer is interposed between the Si oxide layer and the Al wire. In some of the second parts, Al is present. In the others of the second parts, a Si portion and an Al portion are present.
1. A connection structure between a Si member made of Si and an Al member made of Al, the connection structure comprising:
a first part and a second part each interposed between the Si member and the Al member in contact relation with each of the Si member and the Al member, wherein
a Si oxide layer and an Al oxide layer are present in the first part such that the Si oxide layer is in contact with the Si member and the Al oxide layer is interposed between the Si oxide layer and the Al member and
at least one of Si and Al is present in the second part, wherein:
the Si member is a Si electrode,
the Al member is an Al wire,
each of the first and second parts is present in a connection portion in which the Al wire is connected to a surface of the Si electrode, and
the second parts are present in dotted relation at the surface of the Si electrode and at a peripheral portion of the connection portion.
2. The connection structure of claim 1 , wherein
a portion of the Al wire which is in contact with the first part and the second part is deformed and
the deformed portion of the Al wire has a width which is 1.5 times or more a width of a portion of the Al wire which is not deformed.
3. A connection structure between a Si member made of Si and an Al member made of Al, the connection structure comprising:
a first part and a second part each interposed between the Si member and the Al member in contact relation with each of the Si member and the Al member, wherein
a Si oxide layer and an Al oxide layer are present in the first part such that the Si oxide layer is in contact with the Si member and the Al oxide layer is interposed between the Si oxide layer and the Al member and
at least one of Si and Al is present in the second part, wherein:
the Si member is a Si electrode,
the Al member is an Al wire containing Si;
each of the first and second parts is present in a connection portion in which the Al wire is connected to the Si electrode,
the connection portion has a generally ellipsoidal outer configuration at the surface of the Si electrode, and
the second parts are present in dotted relation inside the connection portion longitudinally thereof.
4. A connection structure between a Si member made of Si and an Al member made of Al, the connection structure comprising:
an interposed layer composed of a Si oxide layer and an Al oxide layer between the Si member and the Al member such that the Si member, the Si oxide layer, the Al oxide layer, and the Al member are stacked in this order, wherein
the interposed layer has a penetrating portion which extends from the Al member through the interposed layer to reach the Si member and
the penetrating portion is made of at least one of Al and Si, wherein:
the Si member is a Si electrode,
the Al member is an Al wire containing Si,
the interposed layer is present in a connection portion in which the Al wire is connected to a surface of the Si electrode, and
the penetrating portions are present in dotted relation at the surface of the Si electrode and at a peripheral portion of the connection portion.
5. The connection structure of claim 4 , wherein
a portion of the Al wire which is in contact with the interposed layer is deformed and
the deformed portion of the Al wire has a width which is 1.5 times or more a width of a portion of the Al wire which is not deformed.
6. A connection structure between a Si member made of Si and an Al member made of Al, the connection structure comprising:
an interposed layer composed of a Si oxide layer and an Al oxide layer between the Si member and the Al member such that the Si member, the Si oxide layer, the Al oxide layer, and the Al member are stacked in this order, wherein
the interposed layer has a penetrating portion which extends from the Al member through the interposed layer to reach the Si member and
the penetrating portion is made of at least one of Al and Si, wherein:
the Si member is a Si electrode,
the Al member is an Al wire containing Si,
the interposed layer is present in a connection portion in which the Al wire is connected to a surface of the Si electrode,
the connection portion has a generally ellipsoidal configuration at the surface of the Si electrode, and
the penetrating portions are present in dotted relation inside the connection portion longitudinally thereof.