Contact electrode for microdevices and etch method of manufacture
View Patent ↗A contact electrode for a device is made using an etching process to etch the surface of the contact electrode to form a corrugated contact surface wherein the outer edges of at least one grain is recessed from the outer edges of adjacent grains and is recessed by at least about 0.05 μm from the contact plane. By having such a corrugated surface, the contact electrode is likely to contact another conductor with at least one pure metal grain. This etching treatment reduces contact resistance and contact resistance variability throughout many cycles of use of the contact electrode.
1. A contact electrode for a device supported on a substrate surface, comprising:
a corrugated contact surface having a plurality of metal grains whose outer edges define a contact plane, wherein the outer edge of at least one metal grain is recessed from the outer edges of adjacent metal grains and is recessed by at least about 0.05 μm with respect the contact plane, and wherein the corrugation is defined by adjacent grains of different crystallographic orientations, wherein the adjacent grains are separated by and share a grain boundary.
2. The contact electrode of claim 1 , wherein the metal grains comprise at least one of gold, nickel, aluminum, silver, chromium, copper, cadmium, iron, ruthenium, rhodium, gold-palladium and gold tungsten, and wherein the outer edges of adjacent metal grains is recessed by at most 1 μm.
3. A micromechanical device comprising at least one contact electrode of claim 1 .
4. The micromechanical device of claim 3 , further comprising at least one cantilevered beam supported over the substrate surface and supporting the corrugated contact surface, which is oriented substantially parallel to the substrate surface.
5. The micromechanical device of claim 1 , wherein the corrugated contact surface has a roughness characteristic wavelength of about 0.25 μm and a roughness amplitude of about 0.05 μm.
6. The micromechanical device of claim 5 , wherein the cantilevered beam comprises at least one of single-crystal silicon, nickel and a nickel alloy.
7. The micromechanical device of claim 3 , wherein the at least one contact electrode forms a part of an electrical switch, the switch having a contact resistance of less than 1 ohm.
8. The micromechanical device of claim 4 , wherein the cantilevered beam is actuated by electrostatic forces between the cantilevered beam and an electrostatic drive plate supported on another substrate surface.
9. The micromechanical device of claim 8 , wherein the at least one contact electrode is a multilayer structure, comprising:
a layer of chromium less than about 10 nm thick;
a layer of molybdenum about 10 nm thick; and
a layer of gold between about 300 nm and about 1 μm thick.
10. The micromechanical device of claim 8 , further comprising at least one additional electrode with a corrugated contact surface disposed on the another substrate surface, and wherein the cantilevered beam is electrostatically actuated to bring the contact surface supported by the cantilevered beam into electrical contact with the at least one additional electrode supported on the another substrate surface.
11. A method for making a device, comprising:
forming at least one contact electrode for the device supported by a substrate;
etching a corrugated contact surface on the at least one contact electrode, the corrugated contact surface having a plurality of metal grains whose outer edges define a contact plane, until the outer edge of at least one metal grain is recessed from the outer edges of adjacent metal grains, and is recessed by at least about 0.05 μm with respect to the contact plane and wherein the corrugation is defined by adjacent grains of different crystallographic orientations, wherein the adjacent grains are separated by and share a grain boundary.
12. The method of claim 11 , wherein forming the at least one contact electrode further comprises:
plating a sacrificial layer over a surface of the substrate;
plating at least one gold contact electrode on the sacrificial layer; and
plating a cantilevered beam on the sacrificial layer, and contiguous with the at least one gold contact electrode, wherein the contact surface of the at least one gold contact electrode is oriented substantially perpendicular to the substrate surface.
13. The method of claim 11 , wherein the at least one contact electrode comprises gold, and etching the at least one contact electrode comprises etching the gold contact electrode in a solution comprising at least one of iodine and cyanide, for about 60 seconds.
14. The method of claim 11 , further comprising:
rinsing the substrate in deionized water to remove the etchant and stop the etching of the at least one contact electrode; and
drying the substrate to remove the deionized water and the etchant.
15. The method of claim 11 , wherein etching the at least one contact electrode comprises at least one of etching the at least one contact electrode in a liquid etchant, etching the at least one contact electrode in a gaseous etchant, etching the at least one contact electrode in a plasma, and sputter-etching the at least one contact electrode.
16. The method of claim 11 , wherein forming the at least one contact electrode on the substrate further comprises:
etching an outline of a cantilevered beam in a device layer of the silicon-on-insulator substrate;
forming the at least one contact electrode on an end of the cantilevered beam, such that the contact surface of the at least one contact electrode is substantially parallel to the cantilevered beam; and
releasing the cantilevered beam by etching an insulating layer from the silicon-on-insulator substrate, in a region beneath the outline of the cantilevered beam.
17. The method of claim 11 , wherein forming the at least one contact electrode comprises:
electroplating the at least one contact electrode over a sacrificial layer formed on a surface of the substrate; and
electroplating a cantilevered beam supported over the sacrificial layer, and contiguous with the at least one contact electrode.
18. The method of claim 17 , wherein the contact surface of the at least one contact electrode is disposed in a plane substantially perpendicular to the substrate surface.
19. The method of claim 11 , further comprising:
forming a cavity in a lid wafer; and
bonding the lid wafer to the substrate to form encapsulate the device in a protective cavity.
20. The method of claim 19 , wherein the etching of the contact surface is at least one of a last physical and a last chemical manipulation of the contact surface before the lid wafer is bonded to the substrate to form the protective cavity for the device.