IP Library Granted Patent US 7,514,706
Granted Patent B2
US 7,514,706 · App. 11/549,964 · Granted Apr 7, 2009

Voltage reference circuit using programmable metallization cells

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Quick Facts
Patent No.
US 7,514,706
App. No.
11/549,964
Granted
Apr 7, 2009
Kind
B2
Abstract

A programmable metallization cell voltage reference is disclosed. The voltage reference can be taken from the anode to ground, from the cathode to ground, or differentially across the programmable metallization cell device.

Claims (30)

1. A method of operating a programmable variable resistance cell voltage reference, said method comprising:

forcing a programming current into a programmable variable resistance cell for a predetermined period of time, wherein the programming current instigates a change of resistance in the programmable variable resistance cell;

causing the programming current in the programmable variable resistance cell to produce a reduced current and to stop programming after said predetermined programming period; and

buffering the resulting voltage across the programmable variable resistance cell with a voltage amplifier,

wherein the resulting voltage across the programmable variable resistance cell is the difference between the potentials of the first terminal and the second terminal of said programmable variable resistance cell.

2. The method as recited in claim 1 , wherein said programmable variable resistance cell includes a first terminal and a second terminal, wherein one of said first and second terminals of said programmable variable resistance cell is common to other programmable variable resistance cells in a system and is held at a predetermined low impedance voltage potential.

3. The method as recited in claim 1 , further comprising:

disabling said reduced current in said programmable variable resistance cell; and

forcing a reverse bias across the programmable variable resistance cell to disable said programmable variable resistance cell voltage reference and increase the resistance of said programmable variable resistance cell.

4. The method as recited in claim 1 , further comprising referencing an output from the step of buffering the resulting voltage across the programmable variable resistance cell from one terminal of the programmable variable resistance cell to the lowest potential of the system.

5. The method as recited in claim 1 , wherein the programmable variable resistance cell limits a voltage across the first terminal and the second terminal to a threshold voltage for programming said programmable variable resistance cell when said programming current is forced into said programmable variable resistance cell.

6. The method as recited in claim 1 , wherein a ratio of said programming current and said reduced current is proportional to a ratio of a threshold voltage for programming and a resulting bias across the programmable variable resistance cell.

7. A voltage reference, comprising:

a programmable variable resistance cell, having an anode and a cathode, wherein a reduction in resistance in said programmable variable resistance cell occurs when a voltage threshold for programming is developed across the anode and the cathode, and an increase in resistance occurs when voltage threshold for erase is developed from the cathode to the anode;

a first low impedance voltage source coupled to the anode;

a second low impedance voltage source, of lower value than the first low impedance voltage source, coupled to the cathode via a first switch;

a first current source coupled to the cathode via a second switch;

a second current source coupled to the cathode via a third switch; and

an amplifier coupled to the cathode to perform voltage buffering,

wherein the amplifier is coupled to said anode and said cathode to output a difference in potentials across said programmable variable resistance cell.

8. The voltage reference as recited in claim 7 , wherein said first and second current sources are implemented with transistors.

9. A voltage reference, comprising:

a programmable variable resistance cell having an anode and a cathode, wherein a reduction in resistance in said programmable variable resistance cell occurs when a voltage threshold for programming is developed across the device from the anode to the cathode, and an increase in resistance occurs when a voltage threshold for erase is developed from the cathode to the anode;

a first low impedance voltage source coupled to the cathode;

a second low impedance voltage source of lower value than the first low impedance voltage source coupled to the anode via a first switch;

first current source coupled to the anode via a second switch; and

a second current source coupled to the anode via a third switch,

wherein the amplifier is coupled to said anode and said cathode to output the difference in potentials across the programmable variable resistance cell.

10. The voltage reference of claim 9 , further comprising an amplifier coupled to the anode to perform voltage buffering.

11. The voltage reference as recited in claim 9 , wherein said first and second current sources are implemented with transistors.

Assignments (10)
RELEASE OF SECURITY INTEREST Recorded Sep 24, 2019
From: OBSIDIAN AGENCY SERVICES, INC., AS COLLATERAL AGENT
To: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
Reel/Frame 050480/0836 →
RELEASE OF SECURITY INTEREST Recorded May 9, 2019
From: OPUS BANK
To: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
Reel/Frame 049125/0970 →
SECURITY INTEREST Recorded May 8, 2018
From: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
To: OBSIDIAN AGENCY SERVICES, INC., AS COLLATERAL AGENT
Reel/Frame 046105/0731 →
RELEASE OF SECURITY INTEREST Recorded Oct 3, 2017
From: WESTERN ALLIANCE BANK
To: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
Reel/Frame 044219/0610 →
SECURITY INTEREST Recorded May 22, 2015
From: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
To: OPUS BANK
Reel/Frame 035754/0580 →
RELEASE OF SECURITY INTEREST Recorded Oct 15, 2013
From: OPUS BANK
To: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
Reel/Frame 031414/0232 →
SECURITY AGREEMENT Recorded Oct 7, 2013
From: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
To: BRIDGE BANK, NATIONAL ASSOCIATION
Reel/Frame 031371/0581 →
SECURITY AGREEMENT Recorded Oct 8, 2012
From: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
To: OPUS BANK
Reel/Frame 029090/0922 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NAME OF THE ASSIGNEE PREVIOUSLY RECORDED ON REEL 019578 FRAME 0364. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE IN NAME. Recorded Jan 13, 2012
From: GILBERT, NAD EDWARD
To: ADESTO TECHNOLOGIES CORPORATION
Reel/Frame 027535/0225 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 19, 2007
From: GILBERT, NAD EDWARD
To: ADESTO TECHNOLOGIES
Reel/Frame 019578/0364 →