Method of manufacturing isolation layer pattern in a semiconductor device and isolation layer pattern using the same
View Patent ↗Disclosed is a method of manufacturing an isolation layer pattern in a semiconductor device and an isolation layer pattern in a semiconductor device. A device at a low voltage device formation region may be substantially immune to electric fields from a high voltage device formation region. A field insulation film pattern in a low voltage device formation region (e.g. a logic region) may implement a relatively small design rule at an isolation layer pattern. A method of manufacturing an isolation layer pattern in a semiconductor device (e.g. which may embody a device relatively immune to an electric field from a high voltage device formation region) may include field insulation film patterns with a relatively small design rule in a low voltage device formation region (e.g. a logic region).
1. A method comprising:
depositing a first insulation film and a second insulation film over a semiconductor substrate, wherein the semiconductor substrate comprises a high voltage device formation region and a low voltage device formation region, wherein the first insulating film and the second insulating film are respectively deposited in the high voltage device formation region and the low voltage device formation region using a single deposition process;
patterning the second insulation film to form a second insulation film pattern in the high voltage device formation region and the low voltage device formation region to form a first opening and a second opening, wherein the first opening and the second opening have different slopes with respect to the second insulation film and the first opening and the second opening expose the first insulation film; and
oxidizing the first insulation film at the first opening and the second opening.
2. The method of claim 1 , wherein the first insulation film is formed of an oxide film.
3. The method of claim 1 , wherein the second insulation film is formed of a nitride film.
4. The method of claim 1 , wherein said forming the first opening comprises:
forming a first photoresist pattern over the second insulation film; and
forming the first opening by etching a portion of the high voltage device region of the second insulation film using the first photoresist pattern as a mask, wherein the first opening has a first slope with respect to an upper surface of the first insulation film.
5. The method of claim 4 , wherein said forming the second opening comprises:
forming a second photoresist over the second insulation film; and
forming the second opening by etching a potion of the low voltage device region of the second insulation film using the second photoresist pattern as the mask, wherein the second opening is substantially perpendicular to the upper surface of the first insulation film.
6. The method of claim 5 , wherein said forming the first opening comprises etching the second insulation film to form the first opening at a slope using process conditions that generate polymers.
7. The method of claim 1 , wherein said oxidizing the first insulation film comprises:
forming a first field insulation film having a first bird's beak at a first region of the second insulation film corresponding to the first opening; and
forming a second field insulation film having a second bird's beak at a second region of the second insulation film corresponding to the second opening.
8. The method of claim 7 , wherein:
the first bird's beak has a first slope angle with respect to an upper surface of the first insulation film;
the second bird's beak has a second slope angle with respect to an upper surface of the first insulation film; and
the second slope angle is greater than the first slope angle.
9. The method according to claim 7 , wherein:
the first bird's beak has a first size;
the second bird's beak has a second size; and
the second size is less than the first size.
10. A method comprising:
sequentially forming a first insulation film and a second insulation film over a semiconductor substrate having a high voltage device formation region and a low voltage device formation region, wherein the first insulating film and the second insulating film are respectively formed in the high voltage device formation region and the low voltage device formation region using a single deposition process;
forming a first opening in the second insulation film exposing the first insulation film at the high voltage device formation region and a second opening in the second insulation film exposing the first insulation film at the low voltage device formation region, wherein the first opening and the second opening have different slopes with respect to the second insulation film;
oxidizing the first insulation film at the first opening to form a first field insulation film having a first bird's beak; and then
oxidizing the first insulation film at the second opening to form a second field insulation film having a second bird's beak.
11. The method of claim 10 , wherein:
the first bird's beak is formed at an edge of the first field insulation film and has a first slope angle with respect to the upper surface of the first insulation film;
the second bird's beak is formed at an edge of the second field insulation film and has a second slope angle with respect to the upper surface of the first insulation film; and
the second slope angle is greater than the first slope angle.
12. The method of claim 10 , wherein:
the first field insulation film has a first width;
the second field insulation film has a second width; and
the second width is less than the first width.
13. A method comprising:
providing a semiconductor substrate having a high voltage device formation region and a low voltage device formation region;
depositing a first insulation film using a single deposition process in the high voltage device formation region and the low voltage device formation region;
depositing a second insulation film using a single deposition process in the high voltage device formation region and the low voltage device formation region after depositing the first insulating film;
exposing a first portion of the first insulating film by forming a first opening having a first slope angle in the second insulation film and at the high voltage device formation region;
exposing a second portion of the first insulating film by forming a second opening having a second slope angle in the second insulation film and at the low voltage device formation region to expose the first insulation film after forming the first opening;
forming a first field insulation film at the first opening and a second field insulation film at the second opening by oxidizing the first insulation film,
wherein the first slope angle is different than the second slope angle.
14. The method of claim 13 , wherein the first insulation film comprises an oxide film.
15. The method of claim 14 , wherein the second insulation film comprises a nitride film.
16. The method of claim 13 , wherein exposing the first portion of the first insulating film comprises:
forming a first photoresist pattern over the second insulation film;
forming the first opening by etching a portion of the second insulation film using the first photoresist pattern as a mask; and
removing the first photoresist pattern.
17. The method of claim 16 , wherein exposing the second portion of the first insulating film comprises:
forming a second photoresist over the second insulation film; and
forming the second opening by etching a portion of the second insulation film using the second photoresist pattern as the mask.