Method of implementing polishing uniformity and modifying layout data
View Patent ↗A method for identifying areas of low overburden which degrade (increase) metal polish nonuniformity is discussed. Also described is a method for modifying these areas to increase their overburden, thus slowing down the metal polish rate and improving overall polish uniformity. The resulting structure forms slots in groups of functional lines, such as bus lines, when the functional lines have a density prior to forming the slots that exceeds a predetermined amount. In one embodiment, an area of the wafer has a maximum width of 1.5 microns in an area that has a feature density greater than approximately 50 percent. The methods and resulting structures create a higher feature density, thereby increasing polishing uniformity.
1. A method of modifying a layout design of a material on a substrate for improving a polishing uniformity of the same, said method comprising:
performing one of blurring and defocusing of an overburden distribution of the layout data to provide a modified overburden distribution of a layout data;
determining from the modified overburden distribution of the layout data whether the modified overburden distribution of the layout data contains at least one area having an overburden density transition greater than a threshold amount; and
responsive to a determination that the modified overburden distribution of the layout data contains at least one area having a transition greater than the threshold amount, modifying the layout data to reduce the transition within the at least one area having the transition greater than the threshold amount.
2. The method of claim 1 , wherein the modified overburden distribution comprises an excess overburden as a result of momentum plating, and wherein reducing the overburden within the at least one area includes reducing the excess overburden.
3. The method of claim 1 , wherein the threshold amount includes a transition in the overburden density greater than a given percentage change in density within steps of an area of the material.
4. The method of claim 3 , further wherein the transition in overburden density corresponds to a transition greater than approximately sixty percent (60%) in overburden density in steps approximately 50-100 μm.
5. The method of claim 1 , wherein modifying the layout data comprise modifying a group of wide lines collected together, wherein the wide lines include lines greater than approximately 5 μm width, and wherein the group of wide lines collected together include wide lines collected to greater than approximately fifty percent (50%) overburden density in greater than an area having a width of greater than approximately 50 microns and a length greater than approximately 50 microns.
6. The method of claim 5 , further wherein modifying the layout data includes adding slots to the group of wide lines collected together, and concurrently maintaining a substantially same density of the group of wide lines collected together over an area of the group of wide lines.
7. The method of claim 6 , wherein the group of wide lines collected together comprise at least one of the group consisting of power bus lines and ground bus lines.
8. The method of claim 1 , further comprising:
repeating a cycle of performing, determining, and modifying until the modified overburden distribution within the at least one area is increased to a desired amount, wherein each cycle begins with the previously modified layout data.
9. The method of claim 1 , further comprising:
selectively improving a polish uniformity control for the layout design of the material by selecting the threshold amount to facilitate tolerating a given range of density of the material on the substrate.
10. The method of claim 9 , wherein said method is implemented as one selected from the group consisting of an upfront metal layout design procedure, a metal layout design mask preparation procedure, and a metal layout design repair procedure.
11. The method of claim 1 , wherein the transition includes a step transition.
12. The method of claim 11 , wherein the transition includes a valley transition.