Semiconductor device having diffusion barriers and a method of preventing diffusion of copper in a metal interconnection of a semiconductor device
View Patent ↗Embodiments of a semiconductor device and a method of fabricating the same may include an insulating layer formed on a substrate and having a predetermined hole, a metal interconnection formed in the hole and protruding relative to the insulating layer, a first barrier extending in a lateral direction of the metal interconnection, a second barrier formed on the metal interconnection, and a metal pad formed on the second barrier.
1. A device comprising:
an insulating layer formed over a substrate, the insulating layer having a hole;
a metal interconnection formed in the hole and protruding in a direction relative to the insulating layer;
a first barrier formed over the insulating layer and extending in a lateral direction relative to the metal interconnection;
a second barrier formed over at least the metal interconnection and the first barrier; and
a metal pad formed over the second barrier,
wherein the first barrier and the second barrier each directly contact the metal interconnection.
2. The device of claim 1 , wherein the hole comprises a via hole.
3. The device of claim 1 , wherein the hole comprises a via hole and a trench communicatively coupled with the via hole.
4. The device of claim 1 , wherein the metal interconnection comprises copper.
5. The device of claim 1 , wherein the metal interconnection comprises aluminum.
6. The device of claim 1 , wherein the first barrier has a thickness in a range of approximately 100 Å to 1000 Å.
7. The device of claim 1 , further comprising a third barrier formed at a lower portion of the metal Interconnection.
8. The device of claim 7 , wherein the third barrier comprises at least one of Ta, TaN, TaAlN, TaSiN, Ti, TiN, WN, and TiSiN.
9. The device of claim 7 , wherein the third barrier comprises one of a single layer barrier and a multi-layer barrier.
10. The device of claim 1 , wherein the first barrier comprises a material substantially identical to a material forming the second barrier.
11. The device of claim 10 , wherein the first and second barriers each comprise a single layer of ruthenium oxide (RuO 2 ).
12. The device of claim 10 , wherein the first and second barriers each comprise a dual layer of ruthenium/ruthenium oxide (Ru/RuO 2 ).
13. The device of claim 1 , wherein the first barrier comprises a material different than a material forming the second barrier.
14. The device of claim 13 , wherein the first barrier comprises a single layer of ruthenium oxide (RuO 2 ).
15. The device of claim 13 , wherein the first barrier comprises a dual layer of ruthenium/ruthenium oxide (Ru/RuO 2 ).
16. The device of claim 13 , wherein the second barrier comprises at least one of Ta, TaN, TaAlN, TaSiN, Ti, TiN, WN, and TiSiN.
17. A method comprising:
forming an insulating layer having at least one hole over a substrate;
forming a metal interconnection in the at least one hole such that the metal interconnection protrudes relative to the insulating layer;
forming a first barrier over the substrate and patterning the first barrier to expose at least a portion of the metal interconnection formed in the at least one hole; and
forming a second barrier and an aluminum metal layer over the substrate and patterning the second barrier and the aluminum metal layer, to form a metal pad.
18. The method of claim 17 , wherein the first barrier extends in a lateral direction relative to the metal interconnection.
19. The method of claim 17 , wherein the metal pad is formed by sequentially etching the aluminum metal layer, the second barrier, and the first barrier.
20. The method of claim 17 , wherein forming the first barrier comprises:
forming a ruthenium (Ru) layer over the substrate; and
treating the ruthenium layer with plasma to form a ruthenium oxide (RuO 2 ) layer over a surface of the ruthenium layer.
21. The method of claim 20 , wherein the ruthenium layer is formed through a sputtering process.
22. The method of claim 20 , wherein plasma gas used for treating the ruthenium layer comprises at least one of oxygen (O 2 ) and nitrogen oxide (N 2 O).
23. The method of claim 17 , wherein the first barrier comprises a ruthenium oxide (RuO 2 ) layer formed by performing a sputtering process using ruthenium (Ru) and plasma gas.
24. The method of claim 23 , wherein the plasma comprises at least one of oxygen (O 2 ) and nitrogen oxide (N 2 O).
25. A device comprising:
an insulating layer formed over a substrate, the insulating layer having a hole;
a barrier metal layer formed in the hole;
a metal interconnection formed in the hole over and contacting the barrier metal layer and protruding from the insulating layer to form a pair of stepped areas with the uppermost surface of the insulating layer;
a first barrier formed to contact an uppermost surface of the barrier metal layer and adjacent to and contacting the metal interconnection at the stepped areas;
a second barrier formed over and contacting the metal interconnection and the first barrier; and
a metal pad formed over and contacting the second barrier.