Method of reducing stress-induced mechanical problems in optical components

1. A method of making an optical waveguide having a plurality of layers with different refractive indices, comprising carrying out the following steps in sequence:

a) fabricating a first structure resistant to wafer warp during thermal processing by PECVD (Plasma Enhanced Chemical Vapor Deposition), said first structure being fabricated by:

i) depositing a sacrificial buffer layer on a front face of a silicon wafer,

ii) depositing a first buffer layer on a back face of the silicon wafer,

iii) depositing a first silicon nitride layer on said first buffer layer,

iv) performing a wet etch to remove the sacrificial buffer layer on the front face of the wafer and a portion of the first silicon nitride layer,

v) depositing a second silicon nitride layer on the front face of the wafer to compensate for a remaining portion of said first silicon nitride layer, and

vi) depositing a second buffer layer on said second silicon nitride layer,

vii) whereby said first structure comprises said silicon wafer having said second silicon nitride layer on the front face thereof, said second buffer layer on said second silicon nitride layer, said first buffer layer on said back face of said silicon wafer, and said first silicon nitride layer underneath and contiguous with said first buffer layer;

b) reducing optical absorption and compressive stress in said buffer layers by subjecting said first structure to a first thermal treatment in the presence of an inert gas, said first thermal treatment comprising:

i) stabilizing a diffusion tube at an initial stabilization temperature of about 400° C.;

ii) inserting said first structure into said diffusion tube of step b(i);

iii) stabilizing said first structure at said initial stabilization temperature;

iv) decreasing compressive stress in said buffer layers from an initial compressive value by subjecting said first structure to a temperature that ramps up a rate lying in the range 1° C./min to 25° C./min from said initial stabilization temperature to a constant temperature of about 900° C.;

v) further decreasing compressive stress in said buffer layers and reducing optical absorption by continuing to subject said first structure to said constant temperature in step b(iv) for a period of at least 30 minutes;

vi) causing said first structure to undergo an elastic deformation wherein the compressive stress in said buffer layers increases linearly to a final compressive value that is less than said initial compressive value by ramping down said temperature to which said first structure is subjected to a final stabilization temperature of about 400° C. at a rate lying in the range 1° C./min to 25° C./min; and

vii) extracting said first structure from said diffusion tube of step b(i) at said final stabilization temperature thereof

c) depositing a silica core layer having a different refractive index from said first and second buffer layers on said second buffer layer by PECVD to form a second structure comprising in order said first silicon nitride layer, said first buffer layer, said silicon wafer, said second silica nitride layer, said second buffer layer, and said silica core layer;

d) reducing optical absorption and tensile stress in said core layer by subjecting said second structure to a second thermal treatment in the presence of an inert gas, said second thermal treatment comprising:

i) stabilizing a diffusion tube at a temperature at an initial stabilization temperature lying of about 400° C.;

ii) inserting the second structure into said diffusion tube of step d(i) at said initial stabilization temperature;

iii) relieving tensile stress in said core layer from an initial tensile value by subjecting said second structure to a temperature that ramps up a rate lying in the range 1° C./min to 25° C./min to a constant temperature of about 900° C.;

iv) reducing optical absorption by continuing to subject said second structure to said constant temperature in step d(iii) for a period of at least 30 minutes; and

v) causing said second structure to undergo elastic deformation and said tensile stress in said core layer to decrease linearly to a final tensile value that is less than said initial tensile value by ramping down said temperature to which said second structure is subjected to a final stabilization temperature of about 400° at a rate lying in the range 1° C./min to 25° C./min;

vi) extracting said second structure from the diffusion tube of step d(i) at said final stabilization temperature thereof; and

e) patterning said core laver;

f) deep etching said patterned core layer with penetration into said second buffer layer;

g) depositing a cladding layer on said etched core layer; and

h) patterning and etching said cladding layer while protecting said first buffer layer with said first silicon nitride layer.

2. A method as claimed in claim 1 , wherein said rate in steps b(iv) and d(iii) is 5° C./min.

3. A method as claimed in claim 1 , wherein said rate in steps b(vi) and d(v) is 2.5° C./min.

4. A method as claimed in claim 1 , wherein said first and second treatments are carried out in the presence of a gas selected from the group consisting of: nitrogen and argon.

5. A method as claimed in claim 1 , wherein said inert gas has a constant flow rate.

6. A method as claimed in claim 1 , wherein said flow rate of said inert gas lies in the range 1 liter/min. to 100 liters/min.