Dual liner capping layer interconnect structure and method
View Patent ↗A high tensile stress capping layer on Cu interconnects in order to reduce Cu transport and atomic voiding at the Cu/dielectric interface. The high tensile dielectric film is formed by depositing multiple layers of a thin dielectric material, each layer being under approximately 50 angstroms in thickness. Each dielectric layer is plasma treated prior to depositing each succeeding dielectric layer such that the dielectric cap has an internal tensile stress.
1. A method for forming a semiconductor device, comprising the steps of:
providing a dielectric layer with at least one conductive interconnect partially embedded therein, wherein an upper surface of said at least one conductive interconnect is substantially co-planar with a surface of said dielectric;
depositing a tensile capping layer on said dielectric layer and said at least one conductive interconnect, wherein said tensile capping layer contacts said at least one conductive interconnect;
performing a plasma treatment on said tensile capping layer;
removing a portion of said tensile capping layer from said dielectric layers, wherein said tensile capping layer remains in contact with said at least one conductive interconnect;
depositing a compressive dielectric layer on said tensile capping layer and said dielectric layer; and
removing said compressive dielectric layer from said tensile capping layer, wherein said compressive dielectric layer is formed on said dielectric layer and is adjacent to said tensile capping layer;
wherein said tensile capping layer is a multiple deposition capping layer deposited on said dielectric layer and said at least one conductive interconnect by at least two sequential deposition and plasma treatment steps;
wherein said tensile capping layer exerts a compressive stress at a surface of said conductive interconnect.
2. The method of claim 1 wherein said tensile capping layer is deposited by chemical vapor deposition at a pressure of approximately 7 Torr, a temperature of approximately 400° C., and a high frequency power of approximately 600 Watts and low frequency power of approximately 0 Watts.
3. The method of claim 2 wherein said chemical vapor deposition comprises a gas composition and flow rate of SiH 4 at approximately 150 sccm, N 2 at approximately 8,000 sccm, and NH 3 at approximately 2,500 sccm.
4. The method of claim 1 wherein said tensile capping layer is a dielectric material selected from the group consisting of silicon dioxide, silicon nitride and a compound of silicon, carbon, nitrogen and hydrogen in the form of SiC x N y H z where x, y and z are variable percentages.
5. The method of claim 1 wherein said plasma treatment is at a pressure of approximately 5 Torr, a temperature of approximately 400° C., and a high frequency power of approximately 500 Watts and low frequency power of approximately 0 Watts.
6. The method of claim 5 wherein said plasma treatment comprises a gas composition and flow rate of N 2 at approximately 8,000 sccm for approximately 40 seconds.
7. The method of claim 1 wherein said tensile capping layer and said plasma treatment are performed in situ.
8. The method of claim 1 wherein said compressive dielectric layer is removed from said tensile capping layer by chemical mechanical polishing.