Cmp polishing slurry and method of polishing substrate
View Patent ↗The present invention relates to a CMP polishing slurry comprising cerium oxide particles, a dispersant, a water-soluble polymer and water, wherein the water-soluble polymer is a polymer obtained in polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one of a cationic azo compound and the salt thereof as a polymerization initiator. The present invention provides a polishing slurry and a polishing method allowing polishing efficiently uniformly at high speed without scratch and also allowing easy process management in the CMP technology of smoothening an interlayer dielectric film, BPSG film, and insulation film for shallow trench isolation.
1. A CMP polishing slurry comprising cerium oxide particles, a dispersant, a water-soluble polymer and water,
wherein the water-soluble polymer is a polymer that has a cationic azo compound bound to its terminal,
wherein the water-soluble polymer is a polymer obtained by radical polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one polymerization initiator
selected from the group consisting of
2,2′-azobis[2-(5-methyl-2-imidazolin-2-yl)propane] hydrochloride,
2,2′-azobis[2-(2-imidazolin-2-yl)propane],
2,2′-azobis[2-(2-imidazolin-2-yl)propane] hydrochloride,
2,2′-azobis[2-(2-imidazolin-2-yl)propane] sulfate hydrate,
2,2′-azobis[2-(3,4,5,6-tetrahydropyrimidin-2-yl)propane] hydrochloride,
2,2′-azobis{2-[1-(2-hydroxyethyl)-2-imidazolin-2-yl] propane } hydrochloride,
2,2′-azobis(2-amidino propane) hydrochloride, and
2,2′-azobis(2-methylpropionamidoxime), and salts thereof.
2. The CMP polishing slurry according to claim 1 , wherein the blending amount of the water-soluble polymer is 0.01 weight part or more and 5 weight parts or less with respect to 100 weight parts of the CMP polishing slurry.
3. The CMP polishing slurry according to claim 1 , wherein the weight-average molecular weight of the water-soluble polymer is 200 or more and 50,000 or less.
4. The CMP polishing slurry according to claim 1 , wherein the average particle diameter of the cerium oxide particles is 1 nm or more and 400 nm or less.
5. The CMP polishing slurry according to claim 1 , wherein the blending amount of the cerium oxide particles is 0.1 weight part or more and 5 weight parts or less with respect to 100 weight parts of the CMP polishing slurry.
6. The CMP polishing slurry according to claim 1 , wherein the pH thereof is 4.5 or higher and 6.0 or lower.
7. A polishing method of substrate comprising: pressing a substrate having a film to be polished against a polishing cloth of a polishing table; and polishing the film to be polished by moving the substrate and the polishing table relatively to each other while supplying the CMP polishing slurry according to claim 1 between the film to be polished and the polishing cloth.
8. The CMP polishing slurry according to claim 1 , which is stored as a two-liquid CMP polishing slurry composed of a cerium oxide slurry containing the cerium oxide particles, the dispersant and water and an additional solution containing the water-soluble polymer and water.
9. A method of producing CMP polishing slurry comprising
obtaining a polymer having a cationic azo compound bound to its terminal by radical polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one of a cationic azo compound and the salt thereof as a polymerization initiator, and
mixing at least cerium oxide particles, a dispersant, said water-soluble polymer and water to obtain a CMP polishing slurry,
wherein the cationic azo compound and the salt thereof is at least one selected from the group consisting of
2,2′-azobis[2-(5-methyl-2-imidazolin-2-yl)propane] hydrochloride,
2,2′-azobis[2-(2-imidazolin-2-yl)propane],
2,2′-azobis[2-(2-imidazolin-2-yl)propane] hydrochloride,
2,2′-azobis[2-(2-imidazolin-2-yl)propane] sulfate hydrate,
2,2′-azobis[2-(3,4,5,6-tetrahydropyrimidin-2-yl)propane] hydrochloride,
2,2′-azobis{2-[1-(2-hydroxyethyl)-2-imidazolin-2-yl]propane} hydrochloride,
2,2′-azobis(2-amidino propane) hydrochloride, and
2,2′-azobis(2-methylpropionamidoxime).
10. The method of producing CMP polishing slurry according to claim 9 , wherein the blending amount of the water-soluble polymer is 0.01 weight part or more and 5 weight parts or less with respect to 100 weight parts of the CMP polishing slurry.
11. The method of producing CMP polishing slurry according to claim 9 , wherein the weight-average molecular weight of the water-soluble polymer is 200 or more and 50,000 or less.
12. The method of producing CMP polishing slurry according to claim 9 , wherein the average particle diameter of the cerium oxide particles is 1 nm or more and 400 nm or less.
13. The method of producing CMP polishing slurry according to claim 9 , wherein the blending amount of the cerium oxide particles is 0.1 weight part or more and 5 weight parts or less with respect to 100 weight parts of the CMP polishing slurry.
14. The method of producing CMP polishing slurry according to claim 9 , wherein the pH of the CMP polishing slurry is 4.5 or higher and 6.0 or lower.
15. A polishing method of substrate comprising: pressing a substrate having a film to be polished against a polishing cloth of a polishing table; and polishing the film to be polished by moving the substrate and the polishing table relatively to each other while supplying the CMP polishing slurry made by the method of producing CMP polishing slurry according to claim 9 between the film to be polished and the polishing cloth.
16. The method of producing CMP polishing slurry according to claim 9 , wherein the CMP polishing slurry is stored as a two-liquid CMP polishing slurry composed of a cerium oxide slurry containing the cerium oxide particles, the dispersant and water and an additional solution containing the water-soluble polymer and water.