Methods and systems for thermal-based laser processing a multi-material device
View Patent ↗A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.
1. A method for thermal-based laser processing a multi-material device including a substrate and a microstructure, the method comprising:
generating two or more laser pulses having at least one predetermined characteristic based on a differential thermal property of materials of the device; and
irradiating the microstructure with the two or more laser pulses wherein a first pulse increases a difference in temperature between the substrate and the microstructure and wherein a second pulse further increases the difference in temperature between the substrate and the microstructure to process the multi-material device without damaging the substrate;
wherein the pulses are spaced such that the temperature of the substrate decays rapidly and stabilizes during a time between irradiation of the microstructure with a pair of pulses of said two or more laser pulses, and wherein the two or more pulses irradiate the microstructure during relative motion between the microstructure and a laser beam path associated with the pulses.
2. The method as claimed in claim 1 wherein the first pulse increases the temperature of the microstructure.
3. The method as claimed in claim 2 wherein the second pulse further increases the temperature of the microstructure.
4. The method as claimed in claim 1 wherein at least one pulse has a rise time of less than two nanoseconds.
5. The method as claimed in claim 4 wherein the rise time is less than one nanosecond.
6. The method as claimed in claim 1 wherein the first and second pulses are sufficient to remove the microstructure.
7. The method as claimed in claim 1 wherein the microstructure is a metal link having reflectivity and wherein the leading edge of at least one pulse reduces the reflectivity of the metal link.
8. The method as claimed in claim 7 wherein the substrate is silicon and the device is a semiconductor memory.
9. The method of claim 1 wherein the difference in temperature between the substrate and the microstructure increases during the time between irradiation of the microstructure with the first and second pulses.
10. The method of claim 1 wherein the first and second pulses are separated by between 8 and 20 nanoseconds.
11. A system for thermal-based laser processing a multi-material device including a substrate and a microstructure, the system comprising:
means for generating two or more laser pulses having at least one predetermined characteristic based on a differential thermal property of materials of the device; and
means for irradiating the microstructure with the two or more laser pulses wherein a first pulse increases a difference in temperature between the substrate and the microstructure and wherein a second pulse further increases the difference in temperature between the substrate and the microstructure to process the multi-material device without damaging the substrate;
wherein the temperature of the substrate decays rapidly and stabilizes during the time between irradiation of the microstructure with a pair of pulses of said two or more laser pulses, and wherein the two or more pulses irradiate the microstructure during relative motion between the microstructure and a laser beam path associated with the pulses.
12. The system as claimed in claim 11 wherein the first pulse increases the temperature of the microstructure.
13. The system as claimed in claim 12 wherein the second pulse further increases the temperature of the microstructure.
14. The system as claimed in claim 11 wherein at least one pulse has a rise time of less than two nanoseconds.
15. The system as claimed in claim 14 wherein the rise time is less than one nanosecond.
16. The system as claimed in claim 11 wherein the first and second pulses are sufficient to remove the microstructure.
17. The system as claimed in claim 11 wherein the microstructure is a metal link having reflectivity and wherein the leading edge of at least one pulse reduces the reflectivity of the metal link.
18. The system as claimed in claim 17 wherein the substrate is silicon and the device is a semiconductor memory.
19. The system of claim 11 wherein the difference in temperature between the substrate and the microstructure increases during the time between irradiation of the microstructure with the first and second pulses.
20. The system of claim 11 wherein the first and second pulses are separated by between 8 and 20 nanoseconds.