Rework process for photoresist film

1. A rework process for a photoresist film over a substrate having at least a first antireflection silicone resin film and the photoresist film over the first silicone resin film comprising: at least

removing the photoresist film with at least one solvent selected from the group consisting of cyclopentanone, 5-methyl-2-hexanone ethyl-2-n-amyl ketone, 3-methoxy butanol, 3-ethyl-3-methoxy butanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol diethyl ether, propylene glycol monoethyl ether acetate, ethyl lactate, ethyl pyruvate, ethyl 3-methoxy propionate, ethyl 3-ethoxy propionate, tert-butyl acetate, tert-butyl propionate, propylene glycol mono tert-butyl-ether acetate, and γ-butyrolactone, while leaving the first silicone resin film unremoved;

forming a second antireflection silicone resin film over the first silicone resin film; and

forming a photoresist film again over the second silicone resin film.

2. The rework process for a photoresist film according to claim 1 , wherein the first and the second silicone resin films each has cross-links between side chains of the silicone resin, between a side chain and a silanol group of the silicone resin, or both between side chains of the silicone resin and between a side chain and a silanol group of the silicone resin.

3. The rework process for a photoresist film according to claim 2 , wherein the first and the second silicone resin films each has the cross-links formed by any one or more of a crosslinkable hydroxy group and a crosslinkable epoxy group in a side chain of the silicone resin.

4. The rework process for a photoresist film according to claim 1 , wherein the substrate over which the photoresist film is reworked has an organic film under the first silicone resin film.

5. The rework process for a photoresist film according to claim 2 , wherein the substrate over which the photoresist film is reworked has an organic film under the first silicone resin film.

6. The rework process for a photoresist film according to claim 3 , wherein the substrate over which the photoresist film is reworked has an organic film under the first silicone resin film.

7. A patterning process comprising: at least

forming a photoresist film again over the second silicone resin film by the rework process according to claim 1 ;

subsequently forming a resist pattern on the photoresist film;

forming a pattern on the first and the second silicone resin films by using the photoresist film on which the resist pattern is formed as a mask; and

forming a pattern on the substrate by using the pattern-formed first and second silicone resin films as a mask.

8. A patterning process comprising: at least

forming a photoresist film again over the second silicone resin film by the rework process according to claim 2 ;

subsequently forming a resist pattern on the photoresist film;

forming a pattern on the first and the second silicone resin films by using the photoresist film on which the resist pattern is formed as a mask; and

forming a pattern on the substrate by using the pattern-formed first and second silicone resin films as a mask.

9. A patterning process comprising: at least

forming a photoresist film again over the second silicone resin film by the rework process according to claim 3 ;

subsequently forming a resist pattern on the photoresist film;

forming a pattern on the first and the second silicone resin films by using the photoresist film on which the resist pattern is formed as a mask; and

forming a pattern on the substrate by using the pattern-formed first and second silicone resin films as a mask.

10. A patterning process comprising: at least

forming a photoresist film again over the second silicone resin film by the rework process according to claim 4 ;

subsequently forming a resist pattern on the photoresist film;

forming a pattern on the first and the second silicone resin films by using the photoresist film on which the resist pattern is formed as a mask;

forming a pattern on the organic film by using the pattern-formed first and second silicone resin films as a mask; and

forming a pattern on the substrate by using the pattern-formed organic film as a mask.

11. A patterning process comprising: at least

forming a photoresist film again over the second silicone resin film by the rework process according to claim 5 ;

subsequently forming a resist pattern on the photoresist film;

forming a pattern on the first and the second silicone resin films by using the photoresist film on which the resist pattern is formed as a mask;

forming a pattern on the organic film by using the pattern-formed first and second silicone resin films as a mask; and

forming a pattern on the substrate by using the pattern-formed organic film as a mask.

12. A patterning process comprising: at least

forming a photoresist film again over the second silicone resin film by the rework process according to claim 6 ;

subsequently forming a resist pattern on the photoresist film;

forming a pattern on the first and the second silicone resin films by using the photoresist film on which the resist pattern is formed as a mask;

forming a pattern on the organic film by using the pattern-formed first and second silicone resin films as a mask; and

forming a pattern on the substrate by using the pattern-formed organic film as a mask.