Nitride semiconductor device and method for manufacturing the same
View Patent ↗An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a first p-AlGaN layer, a second p-AlGaN layer and a high concentration p-GaN layer are formed in this order on a substrate. A gate electrode establishes ohmic contact with the high concentration p-GaN layer. A source electrode and a drain electrode are formed on the undoped AlGaN layer. Two-dimensional electron gas generated at the interface between the undoped AlGaN layer and the undoped GaN layer and the first and second p-AlGaN layers form a pn junction in a gate region. The second p-AlGaN layer covers a SiN film in part.
1. A nitride semiconductor device comprising:
a substrate;
a first nitride semiconductor layer formed above the substrate;
a second nitride semiconductor layer formed on the first nitride semiconductor layer and has band gap energy larger than that of the first nitride semiconductor layer;
an insulating film formed on or above the second nitride semiconductor layer and has an opening formed at least in part thereof corresponding to a gate region;
a third nitride semiconductor layer of p-type formed on or above the second nitride semiconductor layer to bury the opening in the gate region and cover the insulating film in part; and
a gate electrode formed on or above the third nitride semiconductor layer.
2. The nitride semiconductor device of claim 1 , wherein
the gate electrode is an ohmic electrode.
3. The nitride semiconductor device of claim 1 further comprising:
a fourth nitride semiconductor layer of p-type formed on the second nitride semiconductor layer and below the third nitride semiconductor layer, wherein
the insulating film is formed on the fourth nitride semiconductor layer.
4. The nitride semiconductor device of claim 3 , wherein
the thickness of the fourth nitride semiconductor layer is not larger than the depth of a depletion layer expanding from the interface between the fourth nitride semiconductor layer and the insulating film to the inside of the fourth nitride semiconductor layer.
5. The nitride semiconductor device of claim 1 is normally-off.
6. The nitride semiconductor device of claim 1 , wherein
the first nitride semiconductor layer is made of GaN,
the second nitride semiconductor layer is made of Al x Ga 1-x N (0≦x≦1),
the third nitride semiconductor layer is made of Al y Ga 1-y N (0≦y≦1) and
the fourth nitride semiconductor layer is made of Al z Ga 1-z N (0≦z≦1).
7. A nitride semiconductor device comprising:
a substrate;
a first nitride semiconductor layer formed above the substrate;
a second nitride semiconductor layer formed on the first nitride semiconductor layer and has band gap energy larger than that of the first nitride semiconductor layer;
a third nitride semiconductor layer of p-type formed on the second nitride semiconductor layer;
an insulating film formed on the third nitride semiconductor layer and has an opening formed at least in part thereof corresponding to a gate region;
a fourth nitride semiconductor layer of p-type formed on or above the second nitride semiconductor layer to bury the opening in the gate region; and
a gate electrode formed on or above the fourth nitride semiconductor layer,
wherein an n-type conductivity region is generated in the region from the first nitride semiconductor layer to the second nitride semiconductor layer.
8. The nitride semiconductor layer of claim 7 , wherein
the thickness of the third nitride semiconductor layer is not larger than the depth of a depletion layer expanding from the interface between the third nitride semiconductor layer and the insulating film to the inside of the third nitride semiconductor layer.
9. The nitride semiconductor device of claim 1 , wherein
an n-type conductivity region is generated in the region from the first nitride semiconductor layer to the second nitride semiconductor layer.
10. The nitride semiconductor device of claim 1 , wherein
the third nitride semiconductor layer covers a part of an upper surface of the insulating film in part.