Polishing slurry for polishing aluminum film and polishing method for polishing aluminum film using the same
View Patent ↗A polishing slurry for polishing an aluminum film used for LSI or the like and a method for polishing an aluminum film using the same are provided. A polishing slurry for polishing an aluminum film comprising a polyvalent carboxylic acid having a first stage acid dissociation exponent at 25° C. of 3 or lower, colloidal silica, and water, and having a pH from 2 to 4, and a polishing method for polishing an aluminum film using the polishing slurry.
1. A polishing slurry consisting of a polyvalent carboxylic acid having a first stage acid dissociation exponent at 25° C. of 3 or lower, colloidal silica, and water, and having a pH from 2 to 4, wherein said polishing slurry is capable of polishing an aluminum film.
2. The polishing slurry according to claim 1 , wherein the polyvalent carboxylic acid is at least one selected from oxalic acid, malonic acid, and tartaric acid.
3. The polishing slurry according to claim 1 , wherein the average particle diameter of the secondary particles of the colloidal silica is from 5 to 100 nm.
4. A method for polishing an aluminum film comprising pressing a substrate having an aluminum film formed thereon against a polishing cloth on a polishing table, and moving the substrate and the polishing table while the polishing slurry for polishing an aluminum film according to claim 1 is supplied between the aluminum film and the polishing cloth, thereby polishing the aluminum film.
5. A method for polishing an aluminum film comprising pressing a substrate having an aluminum film formed thereon against a polishing cloth on a polishing table, and moving the substrate and the polishing table while the polishing slurry according to claim 2 is supplied between the aluminum film and the polishing cloth, thereby polishing the aluminum film.
6. A method for polishing an aluminum film comprising pressing a substrate having an aluminum film formed thereon against a polishing cloth on a polishing table, and moving the substrate and the polishing table while the polishing slurry according to claim 3 is supplied between the aluminum film and the polishing cloth, thereby polishing the aluminum film.
7. A polishing slurry consisting of an oxidizing agent, a polyvalent carboxylic acid having a first stage acid dissociation exponent at 25° C. of 3 or lower, colloidal silica, and water, and having a pH from 2 to 4, wherein said polishing slurry is capable of polishing an aluminum film.
8. The polishing slurry according to claim 7 , wherein the oxidizing agent is at least one selected from hydrogen peroxide, nitric acid, potassium periodate, hypochlorous acid, and ozone water.
9. The polishing slurry according to claim 7 , wherein the average particle diameter of the secondary particles of the colloidal silica is from 5 to 100 nm.
10. A method for polishing an aluminum film comprising pressing a substrate having an aluminum film formed thereon against a polishing cloth on a polishing table, and moving the substrate and the polishing table while the polishing slurry according to claim 7 is supplied between the aluminum film and the polishing cloth, thereby polishing the aluminum film.
11. A method for polishing an aluminum film comprising pressing a substrate having an aluminum film formed thereon against a polishing cloth on a polishing table, and moving the substrate and the polishing table while the polishing slurry according to claim 8 is supplied between the aluminum film and the polishing cloth, thereby polishing the aluminum film.
12. A method for polishing an aluminium film comprising pressing a substrate having an aluminium film formed thereon against a polishing cloth on a polishing table, and moving the substrate and the polishing table while the polishing slurry according to claim 9 is supplied between the aluminium film and the polishing cloth, thereby polishing the aluminum film.