CMOS image sensor
View Patent ↗Disclosed is a CMOS image sensor including a gate electrode of a finger type transfer transistor for controlling the saturation state of a floating diffusion region according to the luminance level (i.e. low luminance or high luminance). The CMOS image sensor includes first and second photodiode regions for generating electrons in response to incident light, and a transfer transistor positioned between the first and second photodiodes for receiving the generated electrons transferred from the first and/or second photodiode.
1. A CMOS image sensor comprising:
first and second photodiode regions for generating electrons in response to incident light; and
a transfer transistor of the CMOS image sensor positioned between the first and second photodiode regions for receiving the generated electrons transferred from the first and second photodiode regions, wherein the transfer transistor has a first gate electrode and a second gate electrode in a same pixel of the CMOS image sensor; and
a floating diffusion region between the first gate electrode and the second gate electrode,
wherein an end part of the first gate electrode and an end part of the second gate electrode are extended to an outer region of the floating diffusion region and are connected to each other to surround the floating diffusion region to form “U”-type finger structure in a single layer,
wherein the first and second photodiode regions are spaced apart and separated from each other by the transfer transistor positioned therebetween.
2. The CMOS image sensor according to claim 1 , wherein the first gate electrode is adjacent to the first photodiode region and the second gate electrode is adjacent to the second photodiode region.
3. The CMOS image sensor according to claim 2 , wherein a channel length of the first gate electrode and a channel length of the second gate electrode are different from each other.
4. The CMOS image sensor according to claim 3 , wherein both the first and second gate electrodes are capable of being turned on by applying a high voltage during a low luminance, and wherein the first gate electrode is capable of being turned on while the second gate electrode remains turned off by applying a low voltage during a high luminance.
5. A CMOS image sensor comprising:
first and second photodiode regions for generating electrons in response to incident light; and
a transfer transistor of the CMOS image sensor positioned between the first and second photodiode regions for receiving the generated electrons transferred from the first and second photodiode regions, wherein the transfer transistor has a first gate electrode and a second gate electrode in a same pixel of the CMOS image sensor;
a floating diffusion region between the first gate electrode and the second gate electrode,
wherein an end part of the first gate electrode and an end part of the second gate electrode are extended to an outer region of the floating diffusion region and are connected to each other to surround the floating diffusion region to form “U”-type finger structure in a single layer,
wherein a channel length of the second gate electrode is twice as long as a channel length of the first gate electrode,
wherein the first and second photodiode regions are spaced apart and separated from each other by the transfer transistor positioned therebetween.
6. The CMOS image sensor according to claim 5 , wherein the first gate electrode is adjacent to the first photodiode region and the second gate electrode is adjacent to the second photodiode region.
7. The CMOS image sensor according to claim 5 , wherein both the first and second gate electrodes are capable of being turned on by applying a high voltage during a low luminance, and wherein the first gate electrode is capable of being turned on while the second gate electrode remains turned off by applying a low voltage during a high luminance.