IP Library Granted Patent US 7,492,210
Granted Patent B2
US 7,492,210 · App. 11/614,800 · Granted Feb 17, 2009

Voltage selection circuit

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Quick Facts
Patent No.
US 7,492,210
App. No.
11/614,800
Granted
Feb 17, 2009
Kind
B2
Abstract

A first switch circuit includes first and second N-type MOSFETs. A second switch circuit includes third and fourth N-type MOSFETs. A control signal is input to a first inverter and a third inverter, the output of the first inverter input to a second inverter and the gate of the fourth MOSFET, the output of the second inverter input to the gate of the first MOSFET, the output of the third inverter input to a fourth inverter and the gate of the third MOSFET, the output of the fourth inverter input to the gate of the second MOSFET. A first input voltage is connected to the source of the second MOSFET and the sources of N-type MOSFETS in the third and fourth inverters. A second input voltage is connected the source of the fourth MOSFET and the sources of N-type MOSFETS in the first and second inverters.

Claims (30)

1. A voltage selection circuit comprising:

first through fourth inverters;

a first switch circuit including a first MOSFET of N type and a second MOSFET of N type, respective drains thereof being connected in common; and

a second switch circuit including a third MOSFET of N type and a fourth MOSFET of N type, respective drains thereof being connected in common,

a common drive voltage being input to the sources of P-type MOSFETS included respectively in the first through fourth inverters,

a first input voltage being input to the sources of N-type MOSFETS included respectively in the third inverter and the fourth inverter,

a second input voltage being input to the sources of N-type MOSFETS included respectively in the first inverter and the second inverter,

a control signal being input to the first inverter and the third inverter,

the output of the first inverter being input to the second inverter and the gate of the fourth MOSFET,

the output of the second inverter being input to the gate of the first MOSFET,

the output of the third inverter being input to the fourth inverter and the gate of the third MOSFET,

the output of the fourth inverter being input to the gate of the second MOSFET,

the first input voltage being input to the source of the second MOSFET,

the second input voltage being input to the source of the fourth MOSFET,

the sources of the first MOSFET and the third MOSFET being connected in common to provide an output from the voltage selection circuit, and

the values of the drive voltage, the first input voltage, and the second input voltage being set for the first MOSFET or the third MOSFET such that each gate-source voltage thereof becomes higher than a gate-source threshold voltage at the time of turning on.

2. A voltage selection circuit comprising:

first through fourth inverters;

a first switch circuit including a first MOSFET of P type and a second MOSFET of P type, respective drains thereof being connected in common; and

a second switch circuit including a third MOSFET of P type and a fourth MOSFET of P type, respective drains thereof being connected in common,

a common drive voltage being input to the sources of N-type MOSFETS included respectively in the first through fourth inverters,

a first input voltage being input to the sources of P-type MOSFETS included respectively in the third inverter and the fourth inverter,

a second input voltage being input to the sources of P-type MOSFETS included respectively in the first inverter and the second inverter,

a control signal being input to the first inverter and the third inverter, the output of the first inverter being input to the second inverter and the gate of the fourth MOSFET,

the output of the second inverter being input to the gate of the first MOSFET,

the output of the third inverter being input to the fourth inverter and the gate of the third MOSFET,

the output of the fourth inverter being input to the gate of the second MOSFET,

the first input voltage being input to the source of the second MOSFET,

the second input voltage being input to the source of the fourth MOSFET,

the sources of the first MOSFET and the third MOSFET being connected in common to provide an output from the voltage selection circuit, and the values of the drive voltage, the first input voltage, and the second input voltage being set for the first MOSFET or the third MOSFET such that each gate-source voltage thereof becomes higher than a gate-source threshold voltage at the time of turning on. on.

Assignments (9)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 22, 2016
From: ON SEMICONDUCTOR NIIGATA CO., LTD.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038988/0804 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
CHANGE OF NAME Recorded Feb 23, 2016
From: NIIGATA SANYO ELECTRONIC CO., LTD.
To: SANYO SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 037892/0398 →
CHANGE OF NAME Recorded Feb 23, 2016
From: SANYO SEMICONDUCTOR MANUFACTURING CO., LTD.
To: ON SEMICONDUCTOR NIIGATA CO., LTD.
Reel/Frame 037893/0953 →
CHANGE OF NAME Recorded Dec 3, 2014
From: SANYO SEMICONDUCTOR CO., LTD
To: SYSTEM SOLUTIONS CO., LTD.
Reel/Frame 034537/0044 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 24, 2014
From: SANYO SEMICONDUCTOR CO., LTD.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 033813/0420 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT #12/577882 PREVIOUSLY RECORDED ON REEL 026594 FRAME 0385. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded May 6, 2014
From: SANYO ELECTRIC CO., LTD
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 032836/0342 →