Method of packaging semiconductor devices
View Patent ↗A method of packaging a semiconductor includes providing a support structure. An adhesive layer is formed overlying the support structure and is in contact with the support structure. A plurality of semiconductor die is placed on the adhesive layer. The semiconductor die are laterally separated from each other and have electrical contacts that are in contact with the adhesive layer. A layer of encapsulating material is formed overlying and between the plurality of semiconductor die and has a distribution of filler material. A concentration of the filler material is increased in all areas laterally adjacent each of the plurality of semiconductor die.
1. A method comprising:
providing a support structure ( 12 );
forming an adhesive layer ( 14 ) overlying the support structure, the adhesive layer having a first adhesive surface in contact with the support structure and an opposite second adhesive surface;
placing a plurality of semiconductor die ( 16 - 20 ) on the second adhesive surface of the adhesive layer, the plurality of semiconductor die being laterally separated from each other and having electrical contacts ( 22 , 24 ) that are in contact with the second adhesive surface of the adhesive layer;
forming a layer of encapsulating material ( 26 ) overlying and between the plurality of semiconductor die, the layer of encapsulating material having a distribution of filler material ( 28 ), a top portion, and a bottom portion;
increasing a concentration of the filler material ( 28 ) in all areas laterally adjacent each of the plurality of semiconductor die so that the bottom portion has a higher concentration of filler material than the top portion; and
removing the top portion.
2. The method of claim 1 further comprising:
also increasing concentration of the filler material in portions of the layer of encapsulating material overlying the plurality of semiconductor die that are in close proximity to the plurality of semiconductor die.
3. The method of claim 1 further comprising:
increasing the concentration of the filler material by applying vibrational energy to the support structure, adhesive layer, plurality of semiconductor die and layer of encapsulating material.
4. The method of claim 3 further comprising:
increasing the concentration of the filler material by applying ultrasonic energy as the vibrational energy.
5. The method of claim 1 further comprising:
increasing the concentration of filler material by aligning the support structure to be below the adhesive layer, plurality of semiconductor die and layer of encapsulating material to permit gravity to modify the filler material concentration.
6. The method of claim 1 further comprising:
increasing the concentration of filler material by placing the support structure, adhesive layer, plurality of semiconductor die and layer of encapsulating material in a vacuum to modify the filler material concentration.
7. The method of claim 1 further comprising:
increasing the concentration of filler material by applying centrifugal energy to the support structure, adhesive layer, plurality of semiconductor die and layer of encapsulating material.
8. The method of claim 1 further comprising:
increasing the concentration of filler material by using a magnetic or charged filler material influenced by a magnetic or electric field.
9. The method of claim 1 wherein the layer of encapsulating material comprises a glob-type resin, the method further comprising:
curing the encapsulating material with a thermal anneal of the layer of encapsulating material, plurality of semiconductor die, adhesive layer and support structure;
wherein the step of removing the top portion comprises planarizing.
10. The method of claim 1 further comprising:
removing the support structure and the adhesive layer;
inverting the layer of encapsulating material and plurality of semiconductor die so that a portion of the layer of encapsulating material is below the plurality of semiconductor die;
exposing electrical contacts to the plurality of semiconductor die; and
completing formation of packaged semiconductor devices with additional structures formed overlying the plurality of semiconductor die.
11. A method comprising:
providing a base;
placing an adhesive tape overlying the base, the adhesive tape having a first adhesive surface in contact with the base and an opposite second adhesive surface;
placing a plurality of semiconductor die on the second adhesive surface of the adhesive tape, the plurality of semiconductor die being laterally separated from each other and having electrical contacts that are in contact with the second adhesive surface of the adhesive layer;
forming an encapsulant overlying and between the plurality of semiconductor die, the encapsulant having a distribution of filler material, a top portion, and a bottom portion;
creating a high concentration region in all areas of the filler material that are laterally adjacent each of the plurality of semiconductor die so that the bottom portion has a higher concentration of filler material than the top portion, the high concentration region having at least eighty-five percent by weight of filler material; and
removing the top portion.
12. The method of claim 11 further comprising:
increasing a size of the high concentration region of the filler material to include a portion overlying the plurality of semiconductor die.
13. The method of claim 11 further comprising:
increasing concentration of the filler material by applying vibrational energy to the workpiece, adhesive tape, plurality of semiconductor die and encapsulant.
14. The method of claim 11 further comprising:
increasing concentration of the filler material by aligning the workpiece to be below the adhesive tape, plurality of semiconductor die and encapsulant to permit gravity to modify the concentration of the filler material.
15. The method of claim 11 further comprising:
increasing concentration of the filler material by placing the workpiece, adhesive tape, plurality of semiconductor die and encapsulant in a vacuum to modify the concentration of the filler material.
16. The method of claim 11 further comprising:
increasing concentration of the filler material by applying centrifugal energy to the workpiece, adhesive tape, plurality of semiconductor die and encapsulant.
17. The method of claim 11 further comprising:
increasing concentration of the filler material by using a magnetic or charged filler material influenced by a magnetic or electric field.
18. The method of claim 11 wherein the encapsulant comprises a glob-type resin, the method further comprising:
curing the encapsulant, plurality of semiconductor die, adhesive tape and workpiece with a thermal anneal;
wherein the step of removing the first portion comprises planarizing.