Granted Patent B2

US 7,670,530 · App. 11/625,082 · Granted Mar 2, 2010

Abstract

Claims (38)

1. A method for patterning first and second substrates in a nanoimprint lithography system, said method comprising:

positioning said first substrate on a first substrate chuck having a cavity, a first side of said first substrate positioned toward a nanoimprint mold assembly, and a second side of said first substrate positioned toward said first substrate chuck;

positioning a nanoimprint material on said first side of said first substrate; obtaining a spatial relationship between said first substrate and said nanoimprint mold assembly and imprinting a pattern in said nanoimprint material on said first side of said first substrate with said nanoimprint mold assembly while concurrently positioning said second substrate on a second substrate chuck;

separating said nanoimprint mold assembly from said nanoimprint material on said first substrate;

positioning a nanoimprint material on said second substrate;

removing said first substrate from said first substrate chuck while concurrently obtaining a spatial relationship between said second substrate and said nanoimprint mold assembly and imprinting a pattern in said nanoimprint material on said second substrate with said nanoimprint mold assembly;

separating said nanoimprint mold assembly from said nanoimprint material on said second substrate; and with said first and second substrates being subjected to substantially the same process conditions

wherein the step of removing said first substrate further comprises a step of flipping said first substrate 180 degrees with respect to said nanoimprint mold assembly such that said nanoimprint material on said first substrate is positioned within said cavity of said first substrate chuck.

2. The method as recited in claim 1 further including the step of removing said second substrate from said second substrate chuck.

3. The method as recited in claim 2 wherein the step of removing said second substrate further comprises a step of flipping said second substrate 180 degrees with respect to said nanoimprint mold assembly.

4. The method as recited in claim 1 wherein the step of positioning said first substrate further comprises a step of obtaining a spatial relationship between a third substrate and said nanoimprint mold assembly and forming a pattern in a nanoimprint material on said third substrate, said third substrate being positioned on said second substrate chuck.

5. The method as recited in claim 1 wherein the step of obtaining a spatial relationship between said first substrate and said nanoimprint mold assembly further comprises a step of concurrently removing a third substrate from said second substrate chuck.

6. The method as recited in claim 1 wherein the step of removing said first substrate from said first substrate chuck further comprises a step of concurrently positioning a third substrate on said first substrate chuck.

7. The method as recited in claim 1 further including translating said first and second substrate chucks about an axis parallel to said first and second substrates.

8. The method as recited in claim 1 further including rotating said first and second substrate chucks about an axis perpendicular to said first and second substrates.

9. A method for processing first and second substrates in a nanoimprint lithography system, said method comprising the steps of:

obtaining a first spatial relationship between a first substrate chuck having a cavity and a nanoimprint mold assembly and a second spatial relationship, differing from said first spatial relationship, between a second substrate chuck and said nanoimprint mold assembly such that a pattern may be imprinted in a nanoimprint material on said first substrate, positioned on said first substrate chuck, with said nanoimprint mold assembly while concurrently obtaining a desired spatial relationship between said second substrate and said second substrate chuck;

separating said nanoimprint mold assembly from said nanoimprint material on said first substrate; and,

flipping said first substrate 180 degrees with respect to said nanoimprint mold assembly such that said nanoimprint material on said first substrate is positioned within said cavity of said first substrate chuck.

10. The method as recited in claim 9 wherein said first and second substrates are subjected to substantially the same process conditions.

11. The method as recited in claim 9 wherein the step of obtaining a desired spatial relationship between said second substrate and said second substrate chuck further includes positioning said second substrate on said second substrate chuck.

12. The method as recited in claim 9 wherein the step of obtaining a desired spatial relationship between said second substrate and said second substrate chuck further includes removing said second substrate from being positioned on said second substrate chuck.

13. The method as recited in claim 12 wherein the step of removing said second substrate further comprises a step of flipping said second substrate 180 degrees with respect to said nanoimprint mold assembly.

14. The method as recited in claim 9 further including positioning said first substrate on said first substrate chuck.

15. The method as recited in claim 9 further including positioning said nanoimprint material on said first substrate.

16. A method for patterning first and second substrates, said method comprising:

positioning said first substrate on a first substrate chuck having a cavity, a first side of said first substrate positioned toward a mold assembly, and a second side of said first substrate positioned toward said first substrate chuck;

positioning a material on said first substrate;

obtaining a spatial relationship between said first substrate and said mold assembly and forming a pattern in said material on said first substrate with said mold assembly while concurrently positioning said second substrate on a second substrate chuck;

separating said mold assembly from said material on said first substrate;

positioning a material on said second substrate;

removing said first substrate from said first substrate chuck while concurrently obtaining a spatial relationship between said second substrate and said mold assembly and forming a pattern in said material on said second substrate with said mold assembly, wherein removing said first substrate includes flipping said first substrate 180 degrees with respect to said mold assembly such that said material on said first substrate is positioned within said cavity of said first substrate chuck;

separating said mold assembly from said material on said second substrate; and with said first and second substrates being subjected to substantially the same process conditions.

17. The method as recited in claim 16 further including the step of removing said second substrate from said second substrate chuck.

18. The method as recited in claim 17 wherein the step of removing said second substrate further comprises a step of flipping said second substrate 180 degrees with respect to said mold assembly.

19. The method as recited in claim 16 wherein the step of positioning said first substrate further comprises a step of obtaining a spatial relationship between a third substrate and said mold assembly and forming a pattern in a material on said third substrate, said third substrate being positioned on said second substrate chuck.

20. The method as recited in claim 16 wherein the step of obtaining a spatial relationship between said first substrate and said mold assembly further comprises a step of concurrently removing a third substrate from said second substrate chuck.

21. The method as recited in claim 16 wherein the step of removing said first substrate from said first substrate chuck further comprises a step of concurrently positioning a third substrate on said first substrate chuck.

Assignments (15)