Memory device with active layer of dendrimeric material
The present memory device includes first and second electrodes, a passive layer between the first and second electrodes; and an active layer between the first and second electrodes, the active layer being of dendrimeric material which provides passages through the active layer.
1. A memory device comprising:
first and second electrodes;
a passive layer between the first and second electrodes; and
an active layer between the first and second electrodes, the active layer comprising material containing dendrimeric material.
2. The memory device of claim 1 wherein the active layer comprises conjugated organic dendrimeric material.
3. The memory device of claim 2 wherein the active layer comprises n-type polyphenyl vinylene isoquinoline.
4. The memory device of claim 2 wherein the active layer comprises phenyl vinyline-2,2′-bithionyl.
5. The memory device of claim 2 wherein the active layer comprises dendrimeric polyphenyl vinylene.
6. The memory device of claim 2 wherein the passive layer comprises copper sulfide.