Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. The molecular cluster ions have the chemical form B n H x + and B n H x −, where 10<n<100 and 0≦x≦n+4. The use of such boron hydride clusters results in a dramatic increase in wafer throughput, as well as improved device yields through the reduction of wafer charging. A method of manufacturing a semiconductor device is further described, comprising the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate.
1 . A method of implanting ions comprising the steps of:
(a) producing a volume of gas phase molecules of a boron hydride B n H m , where n and m are integers and n>10 and m≧0;
(b) ionizing the boron hydride molecules defining ionized boron hydride molecules; and
(c) accelerating the ionized boron hydride molecules by an electric field into a target.
2 - 39 . (canceled)