Transparent epoxy resin composition for molding optical semiconductor and optical semiconductor integrated circuit device using the same

1. A transparent epoxy resin composition for molding an optical semiconductor, comprising following components (A) to (E), in an optical semiconductor integrated circuit device including a lead frame:

(A) an epoxy resin;

(B) a curing agent;

(C) a thiol;

(D) an amine-based curing catalyst represented by following Chemical Formula 1:

R 1 : a hydrogen atom (—H), an alkyl group, or a phenyl group

R 2 : an alkyl group (—CH 3 , —C 2 H 5 , —C 3 H 7 ); and

(E) an oxidation inhibitor,

wherein:

the thiol (C) is C n H 2n+1 SH, n=9-12.

2. The transparent epoxy resin composition according to claim 1 , wherein:

the amine-based curing catalyst (D) is N,N-dimethylbenzylamine.

3. The transparent epoxy resin composition according to claim 1 , wherein:

a glass transition point of the epoxy resin is within a range of 90° C. to 120° C.

4. The optical semiconductor integrated circuit device comprising the

transparent epoxy resin composition for molding an optical semiconductor according to claim 1 and the lead frame, wherein:

raw materials of the transparent epoxy resin composition and the lead frame are used so that a ratio of a coefficient of linear expansion of the epoxy resin composition to a coefficient of linear expansion of the lead frame within an operation temperature region is 15 or less and that the coefficient of linear expansion of the epoxy resin composition is larger than the coefficient of linear expansion of the lead frame.

5. The optical semiconductor integrated circuit device according to claim 4 , wherein:

a surface of the lead frame is at least partly coated with a coating material selected from Ag, Pd, and Au.

6. The optical semiconductor integrated circuit device according to claim 4 , wherein:

electrical connection is formed with a metal thin wire between an optical semiconductor integrated circuit element and an external terminal for output provided at an edge of the lead frame,

a length of the metal thin wire is 1.2 mm or less, and

the metal thin wire is used so that a relationship between a tensile strength Y (gf) of the metal thin wire and a height T (μm) of the optical semiconductor integrated circuit element satisfies the following Mathematical Formula 1:

40 ×Y≧T+ 340(100 ≦T≦ 400).  (Mathematical Formula 1).

7. The optical semiconductor integrated circuit device according to claim 4 , wherein:

A region connected with the optical semiconductor integrated circuit element is physically separated from a region of an external terminal for output provided at an edge of the lead frame, and

the optical semiconductor integrated circuit element is connected to the external terminal for output with a metal thin wire.