Synchronization of operations in distinct memory partitions
View Patent ↗A method is for reducing possible errors in execution of simultaneous read and verify operations of data being modified in first and second different partitions of a memory device caused by turning on or off of a first partition's bank of sense amplifiers while a critical discrimination phase is being carried out by the second partition's bank of sense amplifiers. The method may include establishing an augmented duration of one of the read and verify operations exceeding a duration of the first partition's critical discrimination phase. The method may conditionally delay generation of a turn on or turn off signal of the first partition by a time determined by a command of termination, or by a beginning of the critical discrimination phase of the second partition when the other of the read and verify operations is in progress.
1. A method comprising:
establishing an augmented period that corresponds to a first operation of a first partition of a memory device, the augmented period having a duration exceeding a duration of the first operation; and
conditionally delaying generation of a turn on or turn off signal of a bank of sense amplifiers of the first partition based at least in part on an occurrence of a second operation in a second partition of the memory device.
2. The method of claim 1 , wherein the memory comprises a nonvolatile memory.
3. The method of claim 1 , wherein the first operation is a verify operation of data being modified in the first partition, and the second operation is for a read operation of data from the second partition.
4. The method of claim 1 , wherein the first operation is a read operation of data from the first partition, and the second operation is a verify operation of data being modified in the second partition.
5. The method of claim 1 , wherein establishing the augmented period is based on a plurality of clock signal pulses.
6. The method of claim 3 , wherein the duration of the augmented period is at least twice the duration of the first operation.
7. The method of claim 1 , wherein the turn on or turn off signal is output by a generation path.
8. The method of claim 7 , wherein the generation path comprises a pass-gate and a latch coupled thereto, and wherein the delay is introduced by the pass-gate and the latch.
9. The method of claim 8 , wherein
said conditionally delaying is based at least in part on a command of termination corresponding to the second operation.
10. A memory device comprising:
a first memory partition comprising a bank of sense amplifiers;
a second memory partition different than said first memory partition and comprising a bank of sense amplifiers; and
a control circuit coupled to said first and second memory partitions and configured to
establish an augmented period that corresponds to a first operation of the first partition, the augmented period having a duration exceeding a duration of the first operation, and to conditionally delay generation of a turn on or turn off signal of the bank of sense amplifiers of the second memory partition based at least in part on an occurrence of a second operation in the second partition.
11. The memory device of claim 10 , wherein said first and second memory partitions comprise respective first and second nonvolatile memory partitions.
12. The memory device of claim 10 , wherein said control circuit establishes the augmented period based on a plurality of clock signal pulses.
13. A method comprising:
detecting a first operation in a first partition of a memory device; and
delaying a turning on or a turning off of sense amplifiers that correspond to a second operation in a second partition of the memory device based at least in part on said detecting of the first operation.
14. The method of claim 13 , wherein said delaying comprises: delaying the turning on or turning off of the sense amplifiers until the first operation is completed.
15. The method of claim 13 , wherein said detecting the first operation further comprises detecting a discrimination phase of the first operation and said delaying comprises delaying the turning on or turning off of the sense amplifiers based at least in part on said detecting of the discrimination phase.
16. The method of claim 13 , wherein said delaying comprises:
generating a disabling signal to impede a switch of an enabling signal corresponding to the sense amplifiers.
17. A memory comprising:
a first memory partition;
a second memory partition having a bank of sense amplifiers; and
a control circuit coupled to said first and second memory partitions and configured to detect a first operation in the first memory partition and to delay a turning on or a turning off of the bank of sense amplifiers that corresponds to a second operation in the second memory partition based at least in part on the detected first operation.
18. The memory of claim 17 , wherein the control circuit comprises:
a pass gate configured to receive a signal that corresponds to the first operation and to control a disabling latch to delay the turning on or the turning off of the bank of sense amplifiers based at least in part on the signal.
19. The memory of claim 17 , wherein the control circuit is further configured to:
delay the turning on or turning off of the sense amplifiers until the first operation is completed.
20. The memory of claim 17 , wherein the control circuit is further configured to:
detect a discrimination phase of the first operation; and
delay the turning on or turning off of the sense amplifiers based at least in part on the detected discrimination phase.