Semiconductor device, method for manufacturing a semiconductor device and mask for manufacturing a semiconductor device

1. A semiconductor device with a substrate, the semiconductor device comprising a structure having a first part and a second part, wherein:

at least one section of an edge of the first part of the structure is at an essentially constant distance measured parallel to the substrate to a first section of an edge of a second structure;

at least one section of the edge of the second part of the structure is lined with an edge of a second section of the same second section;

the first section of the edge of the second structure and a second section of the edge of the second structure merge at least at one point, whereby the angle between the tangents of the edges of the first and second section of the second structure is less than 90°; and

the structure and the second structure are distanced by a spacer structure.

2. The semiconductor device according to claim 1 , wherein the second structure is a fill structure.

3. The semiconductor device according to claim 1 , wherein the edge of the first section of the second structure and the edge of the second section of the second structure merge closely to the intersection point of the tangents.

4. The semiconductor device according to claim 3 , wherein the merging is displaced from the intersection point by a rounding due to processing by less than the spacer width.

5. The semiconductor device according to claim 1 , wherein two parts of the second structure are separated by at least one auxiliary structure, so that the edges of the parts of the second section merge at least in two points, whereby the angle between the tangents of the edges are less than 90°.

6. The semiconductor device according to claim 5 , wherein the second section of the second structure encloses the auxiliary structure.

7. The semiconductor device according to claim 5 , wherein the auxiliary structure comprises a dummy structure.

8. The semiconductor device according to claim 1 , wherein the angle between the tangents is less than 60°.

9. The semiconductor device according to claim 1 , wherein the second structure comprises a rounded section at the intersection point of the tangents.

10. The semiconductor device according to claim 1 , wherein the second structure is constricted by at least one of a group of a spacer structure and an auxiliary structure.

11. The semiconductor device according to claim 1 , wherein the second structure is constricted by at least one spacer structure that is part of an auxiliary structure.

12. The semiconductor device according to claim 1 , wherein the spacer comprises a sublithographic structure.

13. The semiconductor device according to claim 1 , wherein the spacer structure comprises a dielectric material.

14. The semiconductor device according to claim 13 , wherein the dielectric material comprises at least one structure selected from the group consisting of a sublithographic structure, a sublithographic line-spacer element, a sublithographic silicon oxide structure, a sublithographic SiO x N y structure, a sublithographic Si 3 N 4 structure, a sublithographic SiN x structure and an airfilled space.

15. The semiconductor device according to claim 1 , wherein the second structure comprises silicon.

16. The semiconductor device according to claim 1 , wherein the semiconductor device comprises a device selected from the group consisting of a memory chip, a DRAM-memory chip, an NROM-memory chip and a microprocessor.

17. The semiconductor device according to claim 1 , wherein the structure comprises part of a fanout structure in a memory chip.

18. The semiconductor device according to claim 1 , wherein the structure comprises a stop layer for a chemical mechanical polish (CMP) process.

19. The semiconductor device according to claim 18 , wherein the stop layer comprises a layer selected from a group consisting of silicon oxide, silicon nitride, silicon oxynitride and combinations thereof.

20. The semiconductor device according to claim 18 , further comprising a softer layer positioned above the stop layer.

21. The semiconductor device according to claim 1 , wherein the substrate comprises a silicon wafer.

22. A semiconductor device comprising:

a layer with a line-by-spacer structure arrangement in at least a portion of the semiconductor device, the structure arrangement having a set of primary structures and a set of secondary structures, the secondary structures being distanced from the adjacent primary structures by a constant width W; and

a first and a second primary structure with a secondary structure laterally arranged between them in a first portion of the semiconductor device, the secondary structure being terminated at the boundary to a second portion of the semiconductor device;

wherein the distance between the first and second primary structure is greater than 2*W in the first portion, and smaller than 2*W in the second portion of the semiconductor device.

23. A semiconductor device comprising:

a layer with a line-by-spacer structure arrangement in at least a portion of the semiconductor device, the structure arrangement having a set of primary structures and a set of secondary structures, each secondary structure being distanced from an adjacent primary structure by a width W;

a terminating primary structure; and

a first and a second primary structure with a first secondary structure laterally arranged between them in a first portion of the semiconductor device, the first secondary structure being terminated at the boundary to a second portion of the semiconductor device;

wherein the distance between the first and second primary structure is greater than 2*W in the first portion, and the terminating structure is located at the boundary between a first and second portion and laterally between the first and second primary structure, the minimum distance between the terminating structure and both of the first and second primary structures being smaller than 2*W.