Method of nickel disilicide formation and method of nickel disilicate source/drain formation

1. A method for forming a silicide, comprising the steps of:

forming a nickel film on a silicon layer (or a silicon substrate) by sputtering nickel in an atmosphere comprising a gas mixture in which a partial pressure ratio of a nitrogen gas in the gas mixture is in a range from 10% (included) to 20% (included);

after the forming of the nickel film introducing nitrogen into at least one of the nickel film and an interface between the nickel film and the silicon layer (or the silicon substrate); and

after the introduction of the nitrogen, applying a heat treatment to the nickel film and the silicon layer (or the silicon substrate) under predetermined conditions to form a nickel disilicide layer,

wherein at least one of the predetermined conditions is that a temperature in a chamber in which the heat treatment is performed is in a range of 400° C. (included) to 800° C. (excluded) in an atmosphere of pure nitrogen at a pressure of approximately 1 atmosphere.

2. The method for forming silicide according to claim 1 , comprising the step of, prior to forming the nickel film, applying plasma processing to the surface of the silicon layer (or the silicon substrate) in an atmosphere including hydrogen gas.

3. The method for forming a silicide according to claim 1 , comprising the step of, prior to forming the nickel disilicide layer, forming on the nickel film a cap film which inhibits diffusion of nitrogen from inside of the nickel film to the outside, wherein the step of forming the nickel disilicide layer applies the heat treatment to the nickel film covered with the cap film and the silicon layer (or the silicon substrate) under the predetermined conditions to form the nickel disilicide layer.

4. The method for forming silicide according to claim 1 , wherein the predetermined conditions are that the pressure in the chamber in which the heat treatment is performed is atmospheric pressure and the temperature in the chamber is in the range from 500° C. (including) to 600° C. (including).

5. A method for fabricating a semiconductor device, comprising the steps of:

forming a gate electrode on a silicon layer;

forming a source/drain layer including a nickel disilicide layer joined with a channel region of the silicon layer;

introducing impurities to the nickel disilicide layer; and

driving the impurities introduced in the nickel disilicide layer into the silicon layer to form an impurity-doped layer at an interface between the nickel disilicide layer and the silicon layer,

wherein the nickel disilicide layer is formed by performing the method for forming silicide according to claim 1 .

6. A method for fabricating a semiconductor device, comprising the steps of:

forming a dummy gate electrode on a silicon layer;

forming a source/drain layer including a nickel disilicide layer joined with a channel region of the silicon layer;

introducing an impurity into the nickel disilicide layer;

driving a part of the impurity introduced in the nickel disilicide layer into the silicon layer to form an impurity-doped layer at the interface between the nickel disilicide layer and the silicon layer;

forming on the silicon layer an insulating layer in which the dummy gate electrode is embedded;

removing the dummy gate electrode embedded in the insulating layer to form a trench conformal to the dummy gate electrode in the insulating layer; and

embedding a gate electrode in the trench;

wherein the nickel disilicide layer is formed by performing the method for forming silicide according to claim 1 .

7. A method for fabricating a semiconductor device, comprising the steps of:

forming a gate electrode on a silicon layer disposed on an insulating layer;

forming a sidewall insulator on a side surface of the gate electrode;

forming a nickel disilicide layer laterally to the sidewall insulator;

introducing an impurity into the nickel disilicide layer; and

applying heat treatment to bring the bottom surface of the nickel disilicide layer into contact with the insulating layer to form from the nickel disilicide layer both a source/drain layer, and a junction of which exists along a crystal orientation plane of the silicon layer, and to diffuse a part of the impurity introduced in the nickel disilicide layer into the silicon layer to form an impurity-doped layer at an interface between the source/drain layer and the silicon layer:

wherein the nickel disilicide layer is formed by performing the method for forming silicide according to claim 1 .

8. A method for fabricating a semiconductor device, comprising the steps of:

forming a gate electrode on a silicon substrate;

forming a sidewall insulator on a side surface of the gate electrode;

forming a nickel disilicide layer laterally to the sidewall insulator;

introducing impurities into the nickel disilicide layer;

forming, by heat treatment, from the nickel disilicide layer a source/drain layer whose junction with a channel region exists along a crystal orientation plane of the silicon substrate and diffusing the impurities introduced into the nickel disilicide layer into the silicon substrate to form an impurity-doped layer at an interface between the source/drain layer and the silicon substrate;

wherein the nickel disilicide layer is formed by performing the method for forming silicide according to claim 1 .