Semiconductor apparatus

1. A semiconductor apparatus, comprising:

a multilevel wiring structure including an uppermost-level wiring layer, a first lower-level wiring layer that is below and next to the uppermost-level wiring layer, and a first interlayer insulating film intervening between the uppermost-level wiring layer and the first lower-level wiring layer, wherein the uppermost-level wiring layer includes a bonding pad and the first lower-level wiring layer includes a first plug wire;

a plurality of first conductive plugs each formed in the first interlayer insulating film to connect the bonding pad to the first plug wire,

wherein the first lower-level wiring layer further comprises a plurality of second plug wires, where the first plug wire and the second plug wires are spaced apart from each other, and a plurality of second conductive plugs each formed in the first interlayer insulating film to connect the bonding pad to a corresponding one of the second plug wires; and

at least one first pass-through wire formed as the first lower-level wiring layer, the first pass-through wire running between adjacent ones of the first and second plug wires in isolation from each of the first and second plug wires and the bonding pad by the first interlayer insulating film.

2. The apparatus as claimed in claim 1 , wherein the first and second plug wires are in substantially parallel to one another.

3. The apparatus as claimed in claim 1 , wherein the first and second plug wires and the first pass-through wire are in substantially parallel to one another.

4. The apparatus as claimed in claim 1 , wherein the multilevel wiring structure further includes a second lower-level wiring layer below and next to the first lower-level wiring layer and a second interlayer insulating film intervening between the first and second lower-level wiring layers,

wherein the second lower-level wiring layer includes a third plug wire, and a plurality of third conductive plugs each formed in the second interlayer insulating film to connect the first plug wire to the third plug wire.

5. The apparatus as claimed in claim 4 , wherein the first lower-level wiring layer further includes:

a plurality of second plug wires, wherein the first plug wire and the second plug wires are spaced apart from one another; and

a plurality of second conductive plugs each formed in the first interlayer insulating film to connect the bonding pad to a corresponding one of the second plug wires, and

wherein the second lower-level wiring layer further includes:

a plurality of fourth plug wires, wherein the third plug wire and the fourth plug wires are spaced apart from one another; and

a plurality of fourth conductive plugs each formed in the second interlayer insulating film to connect each of the second plug wires to a corresponding one of the fourth plug wires.

6. The apparatus as claimed in claim 4 , wherein the first plug wire is elongated in a first direction and the third plug wire is elongated in a second direction that is substantially perpendicular to the first direction.

7. The apparatus as claimed in claim 5 , wherein the first and second plug wires are elongated in parallel to one another in a first direction and the third and fourth plug wires are elongated in parallel to one another in a second direction that is substantially perpendicular to the first direction.

8. A semiconductor apparatus, comprising:

a multilevel wiring structure including an uppermost-level wiring layer, a first lower-level wiring layer that is below and next to the uppermost-level wiring layer, and a first interlayer insulating film intervening between the uppermost-level wiring layer and the first lower-level wiring layer,

wherein the uppermost-level wiring layer includes a bonding pad and the first lower-level wiring layer includes a first plug wire; and

a plurality of first conductive plugs each formed in the first interlayer insulating film to connect the bonding pad to the first plug wire,

wherein the multilevel wiring structure further includes a second lower-level wiring layer below and next to the first lower-level wiring layer and a second interlayer insulating film intervening between the first and second lower-level wiring layers,

wherein the second lower-level wiring layer includes a third plug wire, and a plurality of third conductive plugs each formed in the second interlayer insulating film to connect the first plug wire to the third plug wire,

wherein the first lower-level wiring layer further includes:

a plurality of second plug wires, wherein the first plug wire and the second plug wires are spaced apart from one another; and

a plurality of second conductive plugs each formed in the first interlayer insulating film to connect the bonding pad to a corresponding one of the second plug wires, and

wherein the second lower-level wiring layer further includes:

a plurality of fourth plug wires, wherein the third plug wire and the fourth plug wires are spaced apart from one another; and

a plurality of fourth conductive plugs each formed in the second interlayer insulating film to connect each of the second plug wires to a corresponding one of the fourth plug wires,

wherein the second lower-level wiring layer further includes at least one second pass-through wire between adjacent ones of the third plug wire and the fourth plug wires and isolated from the first plug wire, the second plug wires, the third plug wire and the fourth plug wires by the second interlayer insulating film.

9. The apparatus as claimed in claim 1 , wherein the multilevel wiring structure further includes:

a second lower-level wiring layer below and next to the first lower-level wiring layer; and

a second interlayer insulating film intervening between the first and second lower-level wiring layers, wherein the second lower-level wiring layer includes:

a plurality of third plug wires spaced apart from one another; and

a plurality of third conductive plugs each formed in the second interlayer insulating film to connect each of the first plug wire and the second plug wires to a corresponding one of the third plug wires, and

wherein at least one second pass-through wire is between adjacent ones of the third plug wires and isolated from the first plug wire, the second plug wires and the third plug wires by the second interlayer insulating film.

10. The apparatus as claimed in claim 9 , wherein the first and second plug wires and the first pass-through wire are elongated in parallel to one another in a first direction and the third plug wires and the second pass-through wire are elongated in parallel to one another in a second direction that is substantially perpendicular to the first direction.

11. A semiconductor apparatus, comprising:

a plurality of first plug wires arranged with space between adjacent ones of the first plug wires;

a first insulating layer formed over the first plug wires;

a bonding pad formed on the first insulating layer to cover the first plug wires;

a plurality of sets of first conductive plugs, each set being formed in the first insulating layer to connect the bonding pad to an associated one of the first plug wires, each of the first plug wires being thereby connected to the bonding pad through an associated set of the first conductive plugs;

at least one first pass-through wire running between adjacent ones of the first plug wires in isolation from each of the first plug wires and the bonding pad by the first insulating layer;

a plurality of second plug wires arranged to make a space between adjacent ones of the second plug wires;

a second insulating layer formed over the second plug wires, the first plug wires being formed on the second insulating layer;

a plurality of sets of second conductive plugs each set formed in the second insulating layer to connect an associated one of the first plug wires to an associated one of the second plug wires, each of the first plug wires being thereby connected to the associated one of the second plug wires through an associated set of the second conductive plugs; and

at least one second pass-through wire running between adjacent ones of the second plug wires in isolation from each of the second plug wires.

12. The apparatus as claimed in claim 11 , wherein the first plug wires and the first pass-through wire are elongated in parallel to one another.

13. The apparatus as claimed in claim 11 , wherein the first plug wires and the first pass-through wire are elongated in parallel to one another in a first direction and the second plug wires and the second pass-through wire are elongated in parallel to one another in a second direction that is substantially perpendicular to the first direction.