Compositions and processes for photolithography
View Patent ↗Overcoating layer compositions are provided that are applied above a photoresist composition including for immersion lithography processing as well as non-immersion imaging.
1. A method for processing a photoresist composition, comprising:
(a) applying on a substrate a photoresist composition;
(b) applying above the photoresist composition an organic composition comprising one or more acid generator compounds and a resin component that comprises a copolymer resin that comprises one or more hydrophilic groups, and a resin that comprises photoacid-labile groups,
wherein a resin of the composition above the photoresist layer comprises (i) photoacid-labile groups, and (ii) one or more ester, acetal, ether, hydroxyl or carboxy groups;
(c) immersion exposing the photoresist layer to radiation activating for the photoresist composition.
2. The method of claim 1 wherein the photoresist is immersion exposed and the substrate is a microelectronic wafer substrate.
3. The method of claim 1 wherein the photoresist is exposed to radiation having a wavelength of 193 nm.
4. The method of claim 1 wherein the organic composition comprises a pentapolymer resin that comprises one or more hydrophilic groups.
5. The method of claim 1 wherein the organic composition above the photoresist layer comprises a first resin that is copolymer resin that comprises one or more hydrophilic groups and a second resin that is distinct from the first resin and comprises photoacid-labile groups.
6. The method of claim 1 wherein the organic composition above the photoresist layer comprises a resin that comprises photoacid-labile ester groups.
7. The method of claim 1 wherein the organic composition above the photoresist layer comprises a resin that comprises photoacid-labile acetal groups.
8. The method of claim 1 wherein the organic composition above the photoresist layer comprises a resin that comprises (i) photoacid-labile groups, and (ii) one or more ether groups.
9. The method of claim 1 wherein the organic composition above the photoresist layer comprises a resin that comprises (i) photoacid-labile groups, and (ii) one or more hydroxyl groups.
10. The method of claim 1 wherein the organic composition above the photoresist layer comprises a resin that comprises (i) photoacid-labile groups, and (ii) one or more carboxy groups.
11. The method of claim 1 wherein the organic composition above the photoresist layer does not contain a resin having S atoms.
12. The method of claim 1 wherein the organic composition above the photoresist layer does not contain a resin having fluorine substitution.