High temperature performance capable gallium nitride transistor
View Patent ↗A transistor device capable of high performance at high temperatures. The transistor comprises a gate having a contact layer that contacts the active region. The gate contact layer is made of a material that has a high Schottky barrier when used in conjunction with a particular semiconductor system (e.g., Group-III nitrides) and exhibits decreased degradation when operating at high temperatures. The device may also incorporate a field plate to further increase the operating lifetime of the device.
1. A transistor device, comprising:
an active region comprising a plurality of gallium nitride (GaN) based semiconductor layers;
a source electrode electrically coupled with said active region;
a drain electrode electrically coupled with said active region;
a gate electrode on said active region between said source and drain electrodes, said gate comprising a contact portion comprising a nickel-chromium alloy (NiCr) portion such that said contact portion has a high Schottky barrier and exhibits low degradation at high operating temperatures, said contact portion electrically coupled with said active region, said NiCr portion disposed on a surface of said gate electrode adjacent to said semiconductor layers; and
at least one spacer layer on at least part of the surface of said active region between said source and drain electrodes.
2. The transistor device of claim 1 , wherein said NiCr portion comprises more than zero percent (0%) chromium and not more than ninety percent (90%) chromium.
3. The transistor device of claim 1 , wherein said NiCr portion comprises approximately eighty percent (80%) nickel by weight and approximately twenty percent (20%) chromium by weight.
4. The transistor device of claim 1 , wherein said NiCr portion comprises approximately fifty percent (50%) nickel by weight and approximately fifty percent (50%) chromium by weight.
5. The transistor device of claim 1 , wherein said NiCr portion has a thickness of not less than 5 nm and not more than 100 nm.
6. The transistor device of claim 1 , wherein said NiCr portion has a thickness of approximately 20 nm.
7. The transistor device of claim 1 , wherein said transistor device comprises a gallium nitride (GaN) based high electron mobility transistor (HEMT).
8. The transistor device of claim 1 , wherein said at least one spacer layer comprises an insulating silicon nitride (SiN) layer.
9. The transistor device of claim 1 , said gate electrode further comprising:
a diffusion barrier on said contact portion, such that said contact portion is interposed between said diffusion barrier and said active region;
a lateral conduction layer on said diffusion barrier; and
a protective layer on said lateral conduction layer.
10. The transistor device of claim 9 , wherein said diffusion barrier has a thickness of not less than 10 nm and not more than 100 nm.
11. The transistor device of claim 9 , wherein said diffusion barrier has a thickness of approximately 30 nm.
12. The transistor device of claim 9 , wherein said lateral conduction layer comprises gold (Au).
13. The transistor device of claim 9 , wherein said protective layer comprises nickel (Ni).
14. The transistor device of claim 9 , wherein said lateral conduction layer has a thickness of not less than 100 nm and not more than 2000 nm.
15. The transistor device of claim 9 , wherein said lateral conduction layer has a thickness of approximately 400 nm.
16. The transistor device of claim 9 , wherein said protective layer has a thickness of not less than 10 nm and not more than 100 nm.
17. The transistor device of claim 9 , wherein said protective layer has a thickness of approximately 30 nm.
18. The transistor device of claim 9 , wherein said plurality of active semiconductor layers are formed on a substrate.
19. A field effect transistor (FET), comprising:
an active region comprising a plurality of gallium nitride (GaN) based semiconductor layers;
drain and source electrodes coupled with said active region;
a gate electrode on said active region between said source and drain electrodes, said gate comprising a contact portion comprising a nickel-chromium alloy (NiCr) portion such that said contact portion has a high Schottky barrier and exhibits low degradation at high operating temperatures, said contact portion coupled with said active region, said NiCr portion disposed on a surface of said gate electrode adjacent to said active region;
first and second spacer layers, said first spacer layer covering at least part of the surface of said active region, said second spacer layer covering said gate electrode and at least part of said first spacer layer; and
a field plate on said second spacer layer.
20. The FET of claim 19 , wherein said NiCr portion comprises more than zero percent (0%) chromium and not more than ninety percent (90%) chromium.
21. The FET of claim 19 , wherein said NiCr portion comprises approximately eighty percent (80%) nickel by weight and approximately twenty percent (20%) chromium by weight.
22. The FET of claim 19 , wherein said NiCr portion comprises approximately fifty percent (50%) nickel by weight and approximately fifty percent (50%) chromium by weight.
23. The FET of claim 19 , wherein said NiCr portion has a thickness of not less than 5 nm and not more than 100 nm.
24. The FET of claim 19 , wherein said NiCr portion has a thickness of approximately 20 nm.
25. The FET of claim 19 , wherein said field plate is connected to said gate electrode.
26. The FET of claim 19 , wherein said field plate is connected to said source electrode.
27. The FET of claim 19 , said gate electrode further comprising:
a diffusion barrier on said contact portion, such that said contact portion is interposed between said diffusion barrier and said active region;
a lateral conduction layer on said diffusion barrier; and
a protective layer on said lateral conduction layer.