IP Library Granted Patent US 7,841,076
Granted Patent B2
US 7,841,076 · App. 11/727,547 · Granted Nov 30, 2010

Manufacturing method of wiring substrate and manufacturing method of semiconductor device

Assignee: Shinko Electric Industries Co., Ltd.
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Quick Facts
Patent No.
US 7,841,076
App. No.
11/727,547
Granted
Nov 30, 2010
Kind
B2
Abstract

A multilayer wiring structural body 13 is formed on a surface 57 A of a metal plate 57 used as a support plate in the case of forming the multilayer wiring structural body 13 , and the metal plate 57 is patterned and a slot antenna 60 is formed.

Claims (36)

1. A method of manufacturing a plurality of semiconductor devices, each semiconductor device including a multilayer wiring structural body having a laminated wiring pattern and an insulating layer, an antenna disposed on one surface of said multilayer wiring structural body, and an electronic component disposed on another surface of said multilayer wiring structural body opposite to the one surface of the multilayer wiring structural body, the electronic component being electrically connected to the multilayer wiring structural body, the manufacturing method comprising:

providing a first metal plate and a second metal plate;

pasting the first metal plate to the second metal plate such that a surface opposite to a surface of the first metal plate on which the multilayer wiring structural body is to be formed is opposed to a surface opposite to a surface of the second metal plate on which the multilayer wiring structural body is to be formed;

simultaneously forming the multilayer wiring structural bodies on the first and second metal plates such that the first and second metal plates support the respective multilayer wiring structural bodies while forming the respective multilayer wiring structural bodies; and

patterning the first and second metal plates to form the antennas in the first and second metal plates.

2. The method of manufacturing a plurality of semiconductor devices as claimed in claim 1 , wherein forming the antennas is performed before pasting the first metal plate to the second metal plate.

3. The method of manufacturing a plurality of semiconductor devices as claimed in claim 1 , further comprising:

separating the first metal plate on which the multilayer wiring structural body is formed from the second metal plate on which the multilayer wiring structural body is formed by cutting end portions of the first and second metal plates after forming the multilayer wiring structural bodies.

4. A method of manufacturing a semiconductor device, the semiconductor device including a multilayer wiring structural body having a laminated wiring pattern and an insulating layer, an antenna disposed on one surface of said multilayer wiring structural body, and an electronic component disposed on another surface of said multilayer wiring structural body opposite to the one surface of the multilayer wiring structural body, the electronic component being electrically connected to the multilayer wiring structural body, the manufacturing method comprising:

providing a metal plate;

forming the multilayer wiring structural body on the metal plate such that the metal plate supports the multilayer wiring structural body while forming the multilayer wiring structural body, wherein the multilayer wiring structural body is formed with at least a first layer formed on the metal plate and then a second layer formed on the first layer and the metal plate;

patterning the metal plate to form the antenna in the metal plate;

forming a connection, part for the electronic component on the another surface of said multilayer wiring structural body; and

mounting the electronic component on the connection part.

5. The method of manufacturing a semiconductor device as claimed in claim 4 , wherein forming the antenna is performed before forming the multilayer wiring structural body.

6. A method of manufacturing a semiconductor device, the semiconductor device including a multilayer wiring structural body having a laminated wiring pattern and an insulating layer, an antenna disposed on one surface of said multilayer wiring structural body, and an electronic component disposed on another surface of said multilayer wiring structural body opposite to the one surface of the multilayer wiring structural body, the electronic component being electrically connected to the multilayer wiring structural body, the manufacturing method comprising:

providing a metal plate;

forming the multilayer wiring structural body on the metal plate such that the metal plate supports the multilayer wiring structural body while forming the multilayer wiring structural body, wherein the multilayer wiring structural body is formed in a series of steps with a first layer being formed on the metal plate and a plurality of successive layers being formed on top of the first layer;

patterning the metal plate to form the antenna in the metal plate;

forming a connection part for the electronic component on the another surface of said multilayer wiring structural body; and

mounting the electronic component on the connection part.

7. The method of manufacturing a semiconductor device as claimed in claim 6 , wherein forming the antenna is performed before forming the multilayer wiring structural body.

8. A method of manufacturing a semiconductor device, the semiconductor device including a multilayer wiring structural body having a laminated wiring pattern and an insulating layer, an antenna disposed on one surface of said multilayer wiring structural body, and an electronic component disposed on another surface of said multilayer wiring structural body opposite to the one surface of the multilayer wiring structural body, the electronic component being electrically connected to the multilayer structural body, the manufacturing method comprising:

providing a metal plate;

forming the multilayer wiring structural body on the metal plate such that the metal plate supports the multilayer wiring structural body while forming the multilayer wiring structural body, wherein forming the multiplayer wiring structural body further comprises:

forming a first insulating layer on the metal plate;

forming first openings in the insulating layer to the metal plate; and

forming first wirings with conductive metal by electrolytic plating at least in the first openings;

patterning the metal plate to form the antenna in the metal plate;

forming a connection part for the electronic component on the another surface of said multilayer wiring structural body; and

mounting the electronic component on the connection part.

9. The method of manufacturing a semiconductor device of claim 8 , further comprising:

forming a second insulating layer at least on the first wirings;

forming second opening in the second insulating layer to the first wirings; and

forming second wirings with conductive metal by electrolytic plating at least in the second openings.

10. The method of manufacturing a semiconductor device as claimed in claim 8 , wherein forming the antenna is performed before forming the multilayer wiring structural body.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 27, 2007
From: FUJII, TOMOHARU
To: SHINKO ELECTRIC INDUSTRIES CO., LTD.
Reel/Frame 019158/0632 →
Priority Claims (1)
JP P2006-091483 · Mar 29, 2006 · national
Continuity (1)
Related Publication 20070231962A1 · Oct 4, 2007