Semiconductor device having strain-inducing substrate and fabrication methods thereof
A semiconductor device includes a semiconductor substrate that includes a substrate layer having a first composition of semiconductor material. A source region, drain region, and a channel region are formed in the substrate, with the drain region spaced apart from the source region and the gate region abutting the channel region. The channel region includes a channel layer having a second composition of semiconductor material. Additionally, the substrate layer abuts the channel layer and applies a stress to the channel region along a boundary between the substrate layer and the channel layer.
1. A semiconductor device, comprising:
a semiconductor substrate comprising a substrate layer having a first composition of semiconductor material;
a source region formed in the substrate;
a drain region formed in the substrate and spaced apart from the source region;
a gate region formed in the substrate abutting the channel region; and
a channel region formed in the substrate and abutting the gate region, wherein the channel region comprises a channel layer having a second composition of semiconductor material, wherein the substrate layer abuts the channel layer and applies a first stress to the channel region along a boundary between the substrate layer and the channel layer, the gate region comprises a gate layer that applies a second stress to a second surface of the channel region along a boundary between the channel region and the gate region, and wherein the semiconductor device comprises a junction field effect (JFET) transistor.
2. The semiconductor device of claim 1 , wherein:
the substrate layer comprises semiconductor material having a first lattice constant;
the channel layer comprises semiconductor material having a second lattice constant; and
the first lattice constant is greater than the second lattice constant.
3. The semiconductor device of claim 2 , wherein the substrate layer applies a tensile stress to the channel region.
4. The semiconductor device of claim 1 , wherein the substrate comprises a plurality of substrate layers, each substrate layer comprising an alloy of a first semiconductor material and a second semiconductor material, wherein the plurality of substrate layers are formed upon one another with successive layers having increasing percentages of the second semiconductor material.
5. The semiconductor device of claim 4 , wherein the first semiconductor material comprises silicon and the second semiconductor material comprises silicon germanium.
6. The semiconductor device of claim 1 , wherein the channel layer comprises the first semiconductor material, and wherein the second semiconductor material has a greater lattice constant than the first semiconductor material.
7. The semiconductor device of claim 1 , wherein the gate region comprises semiconductor material doped with impurities of a first polarity, and the channel region comprises semiconductor material doped with impurities of a second polarity.
8. The semiconductor device of claim 1 , further comprising a gate electrode region which overlays the semiconductor substrate, and a gate contact formed on the gate electrode region and in ohmic contact with the gate region.
9. A semiconductor device, comprising:
a semiconductor substrate comprising a substrate layer having a first composition of semiconductor material;
a source region formed in the substrate;
a drain region formed in the substrate and spaced apart from the source region;
a gate region formed in the substrate abutting the channel region; and
a channel region formed in the substrate and abutting the gate region;
wherein:
the semiconductor device comprises a junction field effect (JFET) transistor;
the channel region comprises a channel layer having a second composition of semiconductor material;
the substrate layer abuts the channel layer and applies a tensile stress to the channel region along a boundary between the substrate layer and the channel layer.
10. The semiconductor device of claim 9 , wherein:
the substrate layer comprises semiconductor material having a first lattice constant;
the channel layer comprises semiconductor material having a second lattice constant; and
the first lattice constant is greater than the second lattice constant.
11. The semiconductor device of claim 9 , wherein the substrate comprises a plurality of substrate layers, each substrate layer comprising an alloy of a first semiconductor material and a second semiconductor material, wherein the plurality of substrate layers are formed upon one another with successive layers having increasing percentages of the second semiconductor material.
12. The semiconductor device of claim 11 , wherein the first semiconductor material comprises silicon and the second semiconductor material comprises silicon germanium.
13. The semiconductor device of claim 9 , wherein the gate region comprises semiconductor material doped with impurities of a first polarity, and the channel region comprises semiconductor material doped with impurities of a second polarity.
14. The semiconductor device of claim 9 , further comprising a gate electrode region which overlays the semiconductor substrate, and a gate contact formed on the gate electrode region and in ohmic contact with the gate region.