Matchline sense circuit and method
View Patent ↗A matchline sense circuit for detecting a rising voltage on a matchline of a CAM array is disclosed. The circuit initially precharges a matchline to ground before turning on a current source to supply current to the matchline and raise the voltage of the matchline. A reference matchline sense circuit generates a self-timed control signal to keep the current supply turned on for a predetermined duration of time. Sensed data on the matchlines are latched after the current source is turned off and the matchlines are precharged to ground. Because the matchline sense circuit of the present invention precharges the matchlines to ground instead of the supply voltage, VDD, less power is consumed. By sensing the rise of the matchline voltage to an n-channel transistor threshold potential, the matchline sensing operation speed is increased.
1. A Content Addressable Memory (CAM) adapted to receive a search word sent from a processor, the CAM comprising:
an array of CAM cells arranged in rows and columns;
bitlines extending though said rows of the array;
an address decoder for selecting one of said rows to enable a stored word to be written in by electrical communication along said bitlines;
search lines extending though said rows of said array, and said search lines for receiving the search word for comparison with said stored word during a compare phase, said search lines physically distinct from said bitlines;
circuitries for loading the search word onto said search lines; and
matchlines extending though said columns of the array, said matchlines adapted to be precharged to a miss voltage level in advance of said compare phase.
2. The CAM as claimed in claim 1 wherein some of said search lines transition from an old search value to a new and different search value during a precharge phase.
3. The CAM as claimed in claim 1 wherein a number of said matchlines are pulled towards a match voltage level during said compare phase.
4. The CAM as claimed in claim 3 wherein said miss voltage level corresponds to ground.
5. The CAM as claimed in claim 4 wherein said match voltage level corresponds to V dd .
6. The CAM as claimed in claim 3 wherein said match voltage level corresponds to V dd .
7. The CAM as claimed in claim 1 wherein said miss voltage level corresponds to ground.
8. The CAM as claimed in claim 1 further comprising a plurality of NMOS transistors each having their drains coupled to one of said matchlines.
9. The CAM as claimed in claim 1 wherein said NMOS transistors are search transistors.
10. A Content Addressable Memory (CAM) adapted to receive a search word sent from a processor, the CAM comprising:
an array of CAM cells arranged in rows and columns, and a plurality of words stored in the CAM cells;
search lines extending though said rows of said array, and said search lines for receiving, collectively, the search word for comparison with each of the stored words during a compare phase;
circuitries for loading the search word onto said search lines;
matchlines extending though said columns of the array; and
a reference matchline extending though said columns of the array, both said matchlines and said reference matchline adapted to be precharged to a miss voltage level in advance of said compare phase.
11. The CAM as claimed in claim 10 further comprising:
at least one current source for driving a respective at least one of said matchlines towards a match voltage level for a predetermined time; and
a sense amplifier for detecting said match voltage level to provide a corresponding output.
12. The CAM as claimed in claim 11 further comprising:
a reference current source for driving said reference matchline to said match voltage level; and
a reference sense amplifier for detecting said match voltage level, said match voltage level being detected at said predetermined time after said reference current source is enabled.
13. The CAM as claimed in claim 12 wherein said reference sense amplifier is capable of providing a control signal for enabling said current source for said predetermined time.
14. The CAM as claimed in claim 11 wherein said match voltage level corresponds to V dd .
15. The CAM as claimed in claim 10 wherein said matchlines and said reference matchline all have a substantially identical structure.
16. The CAM as claimed in claim 10 wherein said miss voltage level corresponds to ground.
17. The CAM as claimed in claim 10 further comprising a plurality of NMOS transistors each having their drains coupled to one of said matchlines.
18. The CAM as claimed in claim 17 wherein said NMOS transistors are search transistors.